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Sfoglia per Autore  FABBRI, FILIPPO

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Mostrati risultati da 1 a 20 di 146
Titolo Data di pubblicazione Autore(i) File
Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode 1-gen-2008 Chen, Bin; Chen, Jun; Sekiguchi, Takashi; Ohyanagi, Takasumi; Matsuhata, Hirofumi; Kinoshita, Akimasa; Okumura, Hajime; Fabbri, Filippo
4H silicon carbide particle detectors: study of the defects induced by high energy neutron irradiation 1-gen-2008 Fabbri, Filippo
Cathodoluminescence characterization of beta-SiC nanowires and surface-related silicon dioxide 1-gen-2008 Fabbri F.; Cavallini A.; Attolini G.; Rossi F.; Salviati G.; Dierre B.; Fukata N.; Sekiguchi T.
βC-SiC/SiO2 core-shell nanowires studied by TEM and SEM-CL 1-gen-2009 Rossi F.; Fabbri F.; Attolini G.; Salviati G.; Bosi M.; Watts B. E.; Dierre B.; Fukata N.; Sekiguchi T.
Electrical activities of stacking faults and partial dislocations in 4H-SiC homoepitaxial films 1-gen-2009 Chen, Bin; Chen, Jun; Sekiguchi, Takashi; Ohyanagi, Takasumi; Matsuhata, Hirofumi; Kinoshita, Akimasa; Okumura, Hajime; Fabbri, Filippo
Growth and characterization of b-SiC and SiO2/b-SiC core-shell nanowires 1-gen-2009 Attolini, G; Rossi, F; Bosi, M; Watts, B E; Fabbri, F; Salviati, G
Comparison between cathodoluminescence spectroscopy and capacitance transient spectroscopy on Al+ ion implanted 4H-SiC p+/n diodes 1-gen-2009 Fabbri, F; Natalini, D; Cavallini, A; Sekiguchi, T; Nipoti, R; Moscatelli, F
TEM and SEM-CL studies of SiC Nanowires 1-gen-2009 Rossi F.; Fabbri F.; Attolini G.; Bosi M.; Watts B. E.; Salviati G.
Al<sup>+</sup> implanted 4H-SiC p<sup>+</sup>n diodes: SIMS, C-V and DLTS characterizations 1-gen-2009 Nipoti, R; Fabbri, F; Moscatelli, F; Poggi, A; Cavallini, A; Carnera, A
C-V and DLTS analyses of trap-induced graded junctions: the case of Al+ implanted JTE p+n 4H-SiC diodes. 1-gen-2009 Fabbri, F; Moscatelli, F; Poggi, A; Nipoti, R; Cavallini, A
A new growth method for the synthesis of 3C-SiC nanowires 1-gen-2009 Attolini, G; Rossi, F; Fabbri, F; Bosi, M; Watts, BERNARD ENRICO; Salviati, G
Effects of Chemical Treatment on the Luminescence of ZnO 1-gen-2010 Dierre, B; Yuan, X; Armani, N; Fabbri, F; Salviati, G; Ueda, K; Sekiguchi, T
Optical, Structural and Interface Characterization of Single SiO2-SiC Core-Shell Nanowires Grown with a Low-Cost Method 1-gen-2010 F. Fabbri; F. Rossi; G. Attolini; G. Salviati; S. Iannotta; L. Aversa; R. Verucchi; M. Nardi; N. Fukata; B. Dierre;T. Sekiguchi
Cubic SiC Nanowires: Growth, Characterization and Applications 1-gen-2010 Attolini G.; Rossi F.; Fabbri F.; Bosi M.; Salviati G.; Watts B. E.
Effects of single-layer Shockley stacking faults on the transport properties of high-purity semi-insulating 4H-SiC 1-gen-2010 Fabbri F.; Cavallini A.
Effects of Chemical Treatment on the Luminescence of ZnO 1-gen-2010 Dierre, B; Yuan, X L; Armani, N; Fabbri, F; Salviati, G; Ueda, K; Sekiguchi, T
Room Temperature Strong Infra-Red Light Emission of Boron Doped Silicon Nanowires 1-gen-2010 Fabbri, F; Lazzarini, L; Salviati, G; Fukata, N
Effects of single-layer Shockley stacking faults on the transport properties of high-purity semi-insulating 4H-SiC 1-gen-2010 Fabbri, F; Cavallini, A
Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique 1-gen-2010 Cueff, Sebastien; Labbe, Christophe; Dierre, Benjamin; Fabbri, Filippo; Sekiguchi, Takashi; Portier, Xavier; Rizk, Richard
SiO2-SiC Core-shell nanowire: Optical, structural and interface analysis 1-gen-2010 Fabbri, F; Rossi, F; Attolini, G; Salviati, G; Iannotta, S; Aversa, L; Verucchi, R; Nardi, M; Fukata, N; Dierre, B; Sekiguchi, T
Mostrati risultati da 1 a 20 di 146
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