Sfoglia per Autore IACONA, FABIO SANTO
Activity and Surface Composition of Sputter-Deposited Pt/* -Al2O3 Catalysts
1989 Licciardello, A; Iacona, F; Pignataro, S; Parmaliana, A; Frusteri, F; Giordano, N
INTERFACIAL REACTIONS IN POLYIMIDE METAL SYSTEMS
1991 Iacona, F; Garilli, M; Marletta, G; Puglisi, O; Pignataro, S
Surface characterization of the Al/Si-Ti/W metallization after chlorinated plasma treatments
1991 Torrisi, Rl; Vasquez, P; Viscuso, O; Magro, C; Iacona, F; Puglisi, O
Particle beam-induced reactions versus thermal degradation in PMDA-ODA polyimide
1992 Marletta, G; Iacona, F; Toth, A
Bombardment-induced compositional change in MgAl2O4, MgO and Al2O3
1992 MARLETTA, G; IACONA, F; KELLY, R
ENERGY DEPOSITION MECHANISMS AND RADIATION-INDUCED REACTIONS IN PMDA-ODA POLYIMIDE
1992 Iacona, F; Marletta, G
Optical properties from reflection electron energy loss spectroscopy
1992 Mondio, G; Neri, F; Patane, S; Arena, A; Marletta, G; Iacona, F
Heat-induced chemical evolution of polyamic acid-metal interfaces
1992 IACONA, F; MARLETTA, G; GARILLI, M; PUGLISI, O; PIGNATARO, S
Heat-induced versus particle-beam-induced chemistry in polyimide
1993 MARLETTA, G; IACONA, F
ADXPS study of the chemical structure of polyamic acid/ and polyimide/Ni interfaces
1994 Baschenko, Oa; Iacona, F; Marletta, G; Nefedov, Vi
Chemical and physical property modifications induced by ion irradiation in polymers
1995 G. Marletta;F. Iacona
Surface roughness of SixGe1-x layers obtained by high dose Ge implants in Si after oxidation treatments
1995 Raineri, V; Larsen, Kk; Lavia, F; Lombardo, S; Iacona, F
Atomic force microscopy on SiO2 layers grown on Ge implanted silicon
1996 Raineri, V; Lombardo, S; Iacona, F; La Via, F
Ge ion implantation in Si for the fabrication of Si/GexSi1 - X heterojunction transistors
1996 Lombardo, S; Raineri, V; La Via, F; Iacona, F; Campisano, Su; Pinto, A; Ward, P
Chemical selectivity and energy transfer mechanisms in the radiation-induced modification of polyethersulphone
1996 Marletta, G; Iacona, F
Surface and interface roughness after thermal oxidation of As, B, and Si implanted silicon wafers
1997 Raineri, V; Iacona, F; La Via, F; Camalleri, Cm; Rimini, E
Precipitation of As in thermally oxidized ion-implanted Si crystals
1998 Terrasi A.; Rimini E.; Raineri V.; Iacona F.; La Via F.; Colonna S.; Mobilio S.
Roughness of thermal oxide layers grown on ion implanted silicon wafers
1998 Iacona, F; Raineri, V; La Via, F; Rimini, E
Arsenic redistribution at the SiO2/Si interface during oxidation of implanted silicon
1998 Iacona F.; Raineri V.; La Via F.; Terrasi A.; Rimini E.
Al redistribution into SiO2/Si system during oxidation of high dose Al-implanted silicon
1999 Iacona, F; Raineri, V; LA VIA, Francesco; Gasparotto, A; Calì, D; Rimini, E
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