InGaAs/GaAs core-shell nanowires have been grown by molecular beam epitaxy. The core-shell nanowires show room temperature photoluminescence. At low temperatures their luminescence intensity is two to three orders of magnitudes larger than that of parent InGaAs nanowires grown without external GaAs shell. The nanowires have been structurally characterized by scanning electron microscopy and transmission electron microscopy. (c) 2008 American Institute of Physics.
Room temperature luminescent InGaAs/GaAs core-shell nanowires
Rubini S;Grillo V;Martelli F
2008
Abstract
InGaAs/GaAs core-shell nanowires have been grown by molecular beam epitaxy. The core-shell nanowires show room temperature photoluminescence. At low temperatures their luminescence intensity is two to three orders of magnitudes larger than that of parent InGaAs nanowires grown without external GaAs shell. The nanowires have been structurally characterized by scanning electron microscopy and transmission electron microscopy. (c) 2008 American Institute of Physics.File in questo prodotto:
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