We report a detailed spectroscopic study of the electronic states in ultranarrow ZnS/ZnSe superlattices. The conduction to valence band offset ratio is found to be around 8:92 in nearly pseudomorphic structures. The impact of the weak electron confinement on the optical and electronic properties is discussed, with special attention to laser applications. (C) 1997 American Institute of Physics.

Impact of electron confinement on the lasing properties of ZnS/ZnSe superlattices

Prete P;Lomascolo M;Salviati G;Lazzarini L
1997

Abstract

We report a detailed spectroscopic study of the electronic states in ultranarrow ZnS/ZnSe superlattices. The conduction to valence band offset ratio is found to be around 8:92 in nearly pseudomorphic structures. The impact of the weak electron confinement on the optical and electronic properties is discussed, with special attention to laser applications. (C) 1997 American Institute of Physics.
1997
Inglese
70
22
2943
Sì, ma tipo non specificato
4
info:eu-repo/semantics/article
262
Cingolani, R; Prete, P; Lomascolo, M; Coli, G; Calcagnile, L; Lovergine, N; Salviati, G; Lazzarini, L
01 Contributo su Rivista::01.01 Articolo in rivista
none
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/125135
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? 7
social impact