The mass spectrometry (MS) of stable species and determination of the rates of chemical reactions occurring in gas phase and on treated surfaces are discussed. The presented approach deals with basic equations of chemical kinetics, gas flow analysis and calibration of the mass spectrometer. To verify thia approach, experimental data obtained during etching of amorphous silicon in NF3 plasma have been evaluated.
Mass spectrometric determination of reaction rates during plasma processing of layers
G Cicala;
1995
Abstract
The mass spectrometry (MS) of stable species and determination of the rates of chemical reactions occurring in gas phase and on treated surfaces are discussed. The presented approach deals with basic equations of chemical kinetics, gas flow analysis and calibration of the mass spectrometer. To verify thia approach, experimental data obtained during etching of amorphous silicon in NF3 plasma have been evaluated.File in questo prodotto:
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