An O2 remote plasma metal organic chemical vapor deposition RP-MOCVD route is presented fortailoring the structural, morphological, and optical properties of Er2O3 thin films grown on Si100using the trisisopropylcyclopentadienylerbium precursor. The RP-MOCVD approach producedhighly (100)-oriented, dense, and mechanically stable Er2O3 films with columnar structure.
Plasma ehnancement of metalorganic chemical vapor deposition and properties of Er2O3 nanostructured thin films
MM Giangregorio;M Losurdo;A Sacchetti;P Capezzuto;G Bruno;R Lo Nigro;L Armelao;D Barreca;
2007
Abstract
An O2 remote plasma metal organic chemical vapor deposition RP-MOCVD route is presented fortailoring the structural, morphological, and optical properties of Er2O3 thin films grown on Si100using the trisisopropylcyclopentadienylerbium precursor. The RP-MOCVD approach producedhighly (100)-oriented, dense, and mechanically stable Er2O3 films with columnar structure.File in questo prodotto:
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