The composition of GeO2 films grown on Ge has been studied for different molecular deposition processes and after exposure to ambient air. The stoichiometry, the interaction with moisture, and the interfacial details of the films are shown to be dramatically process dependent. (c) 2008 American Institute of Physics.
Stability and interface quality of GeO2 films grown on Ge by atomic oxygen assisted deposition
Molle A;Spiga S;Fanciulli M
2008
Abstract
The composition of GeO2 films grown on Ge has been studied for different molecular deposition processes and after exposure to ambient air. The stoichiometry, the interaction with moisture, and the interfacial details of the films are shown to be dramatically process dependent. (c) 2008 American Institute of Physics.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
