To analyze the conducting and magnetic properties near the film and substrate interface in manganites, ultrathin films (thickness <= 100 A) of La0.7Sr0.3MnO3 were epitaxially grown by molecular-beam epitaxy on single-crystal (001) LaAlO3, (110) NdGaO3, and (001) SrTiO3 substrates. Structural, magnetic, and magnetoresistive properties were investigated. All samples exhibit a substrate-independent decrease of the c-lattice parameter for thinnest films. Highly anisotropic behavior in both transport and magnetic properties were measured along the in-plane directions parallel to the substrate crystallographic axes. In particular, for the thinnest films (60 A), the negative magnetoresistance at about 120 K with the average current along one of the crystallographic directions, is larger than the room-temperature colossal value. In the same low-temperature range, with the current along the other in-plane crystallographic direction, the magnetoresistance changes sign (resulting to be magnetic field independent for T similar to 150 K). Such an in-plane anisotropy of transport and magnetic properties is investigated with respect to possible intrinsic and extrinsic physical mechanisms.

In-plane anisotropy in the magnetic and transport properties of manganite ultrathin films

POrgiani;CAruta;
2006

Abstract

To analyze the conducting and magnetic properties near the film and substrate interface in manganites, ultrathin films (thickness <= 100 A) of La0.7Sr0.3MnO3 were epitaxially grown by molecular-beam epitaxy on single-crystal (001) LaAlO3, (110) NdGaO3, and (001) SrTiO3 substrates. Structural, magnetic, and magnetoresistive properties were investigated. All samples exhibit a substrate-independent decrease of the c-lattice parameter for thinnest films. Highly anisotropic behavior in both transport and magnetic properties were measured along the in-plane directions parallel to the substrate crystallographic axes. In particular, for the thinnest films (60 A), the negative magnetoresistance at about 120 K with the average current along one of the crystallographic directions, is larger than the room-temperature colossal value. In the same low-temperature range, with the current along the other in-plane crystallographic direction, the magnetoresistance changes sign (resulting to be magnetic field independent for T similar to 150 K). Such an in-plane anisotropy of transport and magnetic properties is investigated with respect to possible intrinsic and extrinsic physical mechanisms.
2006
INFM
INFM
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
Inglese
74
134419-1
134419-7
7
http://prb.aps.org/abstract/PRB/v74/i13/e134419
Sì, ma tipo non specificato
METAL-INSULATOR-TRANSITION
THIN-FILMS
DOPED MANGANITES
MAGNETORESISTANCE
STRAIN
10
info:eu-repo/semantics/article
262
Porgiani, ; Ayupetrov, ; Cadamo, ; Caruta, ; Cbarone, ; Luca, Gmde; Agaldi, ; Mpolichetti, ; Dzola, ; Lmaritato,
01 Contributo su Rivista::01.01 Articolo in rivista
none
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/163990
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