A room temperature study of the high-pressure phases of crystalline Te was carried out by combining Raman spectroscopy and density functional theory (DFT)-based calculations. The pressure dependence of the experimental phonon spectrum reveals the occurrence of phase transitions, confirming the high-pressure scenario recently proposed by Hejny and McMahon. The effects of the incommensurate lattice modulation on the vibrational properties of Te are discussed. DFT-based calculations are consistent with the present and previous experimental data and show that the metallization process at 4 GPa is due to charge-bridges between atoms belonging to adjacent chains. A first-principles study of the stability of the 4 GPa phase is here reported and discussed against the insurgence of lattice modulation.

High-pressure phases of crystalline tellurium: A combined Raman and ab initio study

D Di Castro;C Petrillo;
2012

Abstract

A room temperature study of the high-pressure phases of crystalline Te was carried out by combining Raman spectroscopy and density functional theory (DFT)-based calculations. The pressure dependence of the experimental phonon spectrum reveals the occurrence of phase transitions, confirming the high-pressure scenario recently proposed by Hejny and McMahon. The effects of the incommensurate lattice modulation on the vibrational properties of Te are discussed. DFT-based calculations are consistent with the present and previous experimental data and show that the metallization process at 4 GPa is due to charge-bridges between atoms belonging to adjacent chains. A first-principles study of the stability of the 4 GPa phase is here reported and discussed against the insurgence of lattice modulation.
2012
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
Istituto Officina dei Materiali - IOM -
Inglese
86
6
64103-1
64103-5
5
http://link.aps.org/doi/10.1103/PhysRevB.86.064103DOI:
8
info:eu-repo/semantics/article
262
Marini, C; Chermisi, D; Lavagnini, M; DI CASTRO, Daniele; Petrillo, C; Degiorgi, L; Scandolo, S; Postorino, P
01 Contributo su Rivista::01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/176656
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