We describe a method for the direct epitaxial growth of a single photon emitter, based on GaAs quantum dots fabricated by droplet epitaxy, working at liquid nitrogen temperature on Si substrates. The achievement of quantum photon statistics up to T=80 K is directly provided by antibunching in the second order correlation function as measured with a Hanbury Brown and Twiss interferometer.
High Quality GaAs single photon emitters on Si substrate
C FRIGERI;
2013
Abstract
We describe a method for the direct epitaxial growth of a single photon emitter, based on GaAs quantum dots fabricated by droplet epitaxy, working at liquid nitrogen temperature on Si substrates. The achievement of quantum photon statistics up to T=80 K is directly provided by antibunching in the second order correlation function as measured with a Hanbury Brown and Twiss interferometer.File in questo prodotto:
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