he work reports on the characterization of high purity epitaxial 4H-SiC grown by liquid phase epitaxy and the performances of Au-Ni/4H-SiC detectors fabricated on the same material. X-ray diffraction and topography as well as I-V, C-V and DLTS measurements are used for the evaluation of the material properties and device characteristics. The X-ray detection abilities are evaluated by pulse-height spectra measurements of the 241Am. Preliminary results of the detector hardness to fast neutron and gamma ray radiations are also reported.

Surface barrier 4H-SiC soft X-ray detecor for hot plasmas diagnostic

Gombia E;Ferrari C;
2012

Abstract

he work reports on the characterization of high purity epitaxial 4H-SiC grown by liquid phase epitaxy and the performances of Au-Ni/4H-SiC detectors fabricated on the same material. X-ray diffraction and topography as well as I-V, C-V and DLTS measurements are used for the evaluation of the material properties and device characteristics. The X-ray detection abilities are evaluated by pulse-height spectra measurements of the 241Am. Preliminary results of the detector hardness to fast neutron and gamma ray radiations are also reported.
2012
Inglese
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
247
250
9781467311984
http://www.scopus.com/record/display.url?eid=2-s2.0-84874121184&origin=inward
Sì, ma tipo non specificato
11-15 Nov. 2012
Smolenice castle
4H-SiC
Au-Ni/4H-SiC detectors . X-ray diffraction and topography
I-V
C-V and DLTS measurements
10
none
Dubecky, F; Gombia, E; Vanko, G; Ferrari, C; Zat'Ko, B; Kovac, P; Bacek, D; Baldini, M; Ryc, L; Necas, V
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/312603
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