We present the fabrication and test of arrays of GaAs Schottky diodes with sub-micrometric junction area and negligible parasitic capacitances working as rectifying detectors at sub-THz frequencies. GaAs Micromachining techniques are used to decrease the cross talking between adjacent diode detectors.

Micromachined arrays of air-bridge GaAs Schottky diodes for THz cameras

Giovine E;
2010

Abstract

We present the fabrication and test of arrays of GaAs Schottky diodes with sub-micrometric junction area and negligible parasitic capacitances working as rectifying detectors at sub-THz frequencies. GaAs Micromachining techniques are used to decrease the cross talking between adjacent diode detectors.
2010
Istituto di fotonica e nanotecnologie - IFN
Inglese
IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves
9781424466573
http://www.scopus.com/record/display.url?eid=2-s2.0-78649355618&origin=inward
05-10/09/2010
Rome; Italy
Schottky diodes
THz detectors
1
none
Casini, R.; Dominijanni, D.; Giovine, E.; Ortolani, M.; Gatta, F.; D'Amico, A.; Foglietti, V.
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/363135
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