The effect of varying growth rate on the formation of defects in homo-epitaxially grown cubic silicon carbide (3C-SiC) is studied. Three growth rates are considered (30, 60 and 90 ?m/hr) demonstrating that as the growth rate increases the density of point defects, as demonstrated by photoluminescence, and stacking faults (SFs), as measured by a KOH etching procedure, increase. Scanning transmission electron microscopy images demonstrate generation, annihilation and closure of SFs as a function film thickness. High resolution X-ray diffraction is used to uncover the higher quality of homo-epitaxial with respect hetero-epitaxial films through the examination of the sample mosaicity and SF density.
High resolution investigation of stacking fault density by HRXRD and STEM
Alberti A;Smecca E;Zimbone M;La Via F
2019
Abstract
The effect of varying growth rate on the formation of defects in homo-epitaxially grown cubic silicon carbide (3C-SiC) is studied. Three growth rates are considered (30, 60 and 90 ?m/hr) demonstrating that as the growth rate increases the density of point defects, as demonstrated by photoluminescence, and stacking faults (SFs), as measured by a KOH etching procedure, increase. Scanning transmission electron microscopy images demonstrate generation, annihilation and closure of SFs as a function film thickness. High resolution X-ray diffraction is used to uncover the higher quality of homo-epitaxial with respect hetero-epitaxial films through the examination of the sample mosaicity and SF density.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
