In this work we present the results of an electrical and structural characterization of MBE deposited InAs/ I n0.15 Ga0.85 As QD structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening. The samples have been investigated by atomic force microscopy (AFM), transmission electron microscope (TEM), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) techniques. The results obtained by the above techniques are compared and discussed.
Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs
Nasi L;Gombia E;Mosca R;Trevisi G;Seravalli L;Frigeri P;Bocchi C;Franchi S
2009
Abstract
In this work we present the results of an electrical and structural characterization of MBE deposited InAs/ I n0.15 Ga0.85 As QD structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening. The samples have been investigated by atomic force microscopy (AFM), transmission electron microscope (TEM), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) techniques. The results obtained by the above techniques are compared and discussed.File in questo prodotto:
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