The electrical activation of 1×10 cm implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching the stationary electrical activation at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.
About the electrical activation of 1×1020 cm-3 ion implanted al in 4H-SiC at annealing temperatures in the range 1500 - 1950°C
Nipoti Roberta;
2018
Abstract
The electrical activation of 1×10 cm implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching the stationary electrical activation at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.File in questo prodotto:
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