The race of integrated-circuit technology towards high bit density has already brought transistor densities of the order of 109 cm-2, while keeping conventional circuit layouts. Crossbar structures are widely believed to meet the requirements of high bit density along with sustainable interconnection complexity avoiding the dramatic cost increase of the manufacturing facilities
Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires
Ferri M;Veronese GP;Solmi S;
2010
Abstract
The race of integrated-circuit technology towards high bit density has already brought transistor densities of the order of 109 cm-2, while keeping conventional circuit layouts. Crossbar structures are widely believed to meet the requirements of high bit density along with sustainable interconnection complexity avoiding the dramatic cost increase of the manufacturing facilitiesFile in questo prodotto:
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