In the quest of nano-objects for future electronics, silicon nanowires could possibly take over carbon nanotubes. Here we show the growth by self-organization of straight, massively parallel silicon nanowires having a width of 1.6 nm, which are atomically perfect and highly metallic conductors. Surprisingly, these silicon nanowires display a strong symmetry breaking across their widths with two chiral species that selfassemble in large left-handed and right-handed magnetic-like domains.
Growth of straight, atomically perfect, highly metallic silicon nanowires with chiral asymmetry
Paola De Padova;Claudio Quaresima;Paolo Perfetti;Bruno Olivieri;
2008
Abstract
In the quest of nano-objects for future electronics, silicon nanowires could possibly take over carbon nanotubes. Here we show the growth by self-organization of straight, massively parallel silicon nanowires having a width of 1.6 nm, which are atomically perfect and highly metallic conductors. Surprisingly, these silicon nanowires display a strong symmetry breaking across their widths with two chiral species that selfassemble in large left-handed and right-handed magnetic-like domains.File in questo prodotto:
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