A comparative study of the morphology of 3C-SiC films prepared with different C:Si ratios is presented. The silane precursor controls the growth rate at all values of C:Si ratio but combined observations using Atomic Force Microscopy and Scanning Electron Microscopy indicate that the C:Si ratio is critical in determining the grain size and faceting at C:Si values close to 1. Makyoh topography reveals various surface defects, a slight mesoscale roughness and bending of the epiwafers.
A study of the morphology of 3C-SiC layers grown at different C/Si ratios
Attolini G;Watts B E;Bosi M;Rossi F;
2009
Abstract
A comparative study of the morphology of 3C-SiC films prepared with different C:Si ratios is presented. The silane precursor controls the growth rate at all values of C:Si ratio but combined observations using Atomic Force Microscopy and Scanning Electron Microscopy indicate that the C:Si ratio is critical in determining the grain size and faceting at C:Si values close to 1. Makyoh topography reveals various surface defects, a slight mesoscale roughness and bending of the epiwafers.File in questo prodotto:
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