Sfoglia per Rivista 2D MATERIALS
On the role of nano-confined water at the 2D/SiO2 interface in layer number engineering of exfoliated MoS2 via thermal annealing
2020 Palleschi, S; D'Olimpio, G; Benassi, P; Nardone, M; Alfonsetti, R; Moccia, G; Renzelli, M; Cacioppo, Oa; Hichri, A; Jaziri, S; Politano, A; Ottaviano, L
Optical dielectric function of two-dimensional WS2 on epitaxial graphene
2020 Magnozzi, M; Ferrera, M; Piccinini, G; Pace, S; Forti, S; Fabbri, F; Coletti, C; Bisio, F; Canepa, M
Photocarrier-induced band-gap renormalization and ultrafast charge dynamics in black phosphorus
2019 Roth, S.; Crepaldi, A.; Puppin, M.; Gatti, G.; Bugini, D.; Grimaldi, I; Barrilot, T. R.; Arrell, C. A.; Frassetto, F.; Poletto, L.; Chergui, M.; Marini, A.; Grioni, M.
Production and processing of graphene and related materials
2020 Backes, C; Abdelkader, ; A, M; Alonso, C; Andrieuxledier, A; Arenal, R; Azpeitia, J; Balakrishnan, N; Banszerus, L; Barjon, J; Bartali, R; Bellani, S; Berger, C; Berger, R; Ortega, ; M M, B; Bernard, C; Beton, ; P, H; Beyer, A; Bianco, A; Bggild, P; Bonaccorso, F; Barin, ; G, B; Botas, C; Bueno, ; R, A; Carriazo, D; Castellanosgomez, A; Christian, M; Ciesielski, A; Ciuk, T; Cole, ; M, T; Coleman, J; Coletti, C; Crema, L; Cun, H; Dasler, D; De Fazio, D; Dez, N; Drieschner, S; Duesberg, ; G, S; Fasel, R; Feng, X; Fina, A; Forti, S; Galiotis, C; Garberoglio, G; Garca, ; J, M; Garrido, ; J, A; Gibertini, M; Glzhuser, A; Gmez, J; Greber, T; Hauke, F; Hemmi, A; Hernandezrodriguez, I; Hirsch, A; Hodge, ; S, A; Huttel, Y; Jepsen, ; P, U; Jimenez, I; Kaiser, U; Kaplas, T; Kim, H; Kis, A; Papagelis, K; Kostarelos, K; Krajewska, A; Lee, K; Li, C; Lipsanen, H; Liscio, A; Lohe, ; M, R; Loiseau, A; Lombardi, L; Lpez, ; M, F; Martin, O; Martn, C; Martnez, L; Martingago, ; J, A; Martnez, ; J, I; Marzari, N; Mayoral, A; Mcmanus, J; Melucci, M; Mndez, J; Merino, C; Merino, P; Meyer, ; A, P; Miniussi, E; Miseikis, V; Mishra, N; Morandi, V; Munuera, C; Muoz, R; Nolan, H; Ortolani, L; Ott, ; A, K; Palacio, I; Palermo, V; Parthenios, J; Pasternak, I; Patane, A; Prato, M; Prevost, H; Prudkovskiy, V; Pugno, N; Rojo, T; Rossi, A; Ruffieux, P; Samor, P; Schu, L; Setijadi, E; Seyller, T; Speranza, G; Stampfer, C; Stenger, I; Strupinski, W; Svirko, Y; Taioli, S; Teo, ; K B, K; Testi, M; Tomarchio, F; Tortello, M; Treossi, E; Turchanin, A; Vazquez, E; Villaro, E; Whelan, ; P, R; Xia, Z; Yakimova, R; Yang, S; Yazdi, ; G, R; Yim, C; Yoon, D; Zhang, X; Zhuang, X; Colombo, L; Ferrari, ; A, C; Garciahernandez, ; M,
Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor
2015 Miseikis V.; Convertino D.; Mishra N.; Gemmi M.; Mashoff T.; Heun S.; Haghighian N.; Bisio F.; Canepa M.; Piazza V.; Coletti C.
Reduction and shaping of graphene-oxide by laser-printing for controlled bone tissue regeneration and bacterial killing
2017 Palmieri, V.; Barba, M.; Di Pietro, L.; Gentilini, S.; Braidotti, M. C.; Ciancico, C.; Bugli, F.; Ciasca, G.; Larciprete, R.; Lattanzi, W.; Sanguinetti, M.; De Spirito, M.; Conti, C.; Papi, M.
Site-specific symmetry sensitivity of angle-resolved photoemission spectroscopy in layered palladium diselenide
2021 Cattelan, M; Sayers, C J; Wolverson, D; Carpene, E
STM study of exfoliated few layer black phosphorus annealed in ultrahigh vacuum
2019 Kumar, A; Telesio, F; Forti, S; Altemimy, A; Coletti, C; Serranoruiz, M; Caporali, M; Peruzzini, M; Beltram, F; Heun, S
Strain effects in monolayer iron-chalcogenide superconductors
2015 Tresca C.; Ricci F.; Profeta G.
Strong-coupling charge density wave in monolayer TiSe2
2021 Watson, Matthew D.; Rajan, Akhil; Antonelli, Tommaso; Underwood, Kaycee; Markovic, Igor; Mazzola, Federico; Clark, Oliver J.; Siemann, GesaRoxanne; Biswas, Deepnarayan; Hunter, Andrew; Jandura, Sven; Reichstetter, Janika; McLaren, Martin; Le Fevre, Patrick; Vinai, Giovanni; King, Philip D. C.
Structural, optical and compositional stability of MoS2 multi-layer fl akes under high dose electron beam irradiation
2016 Rotunno E.; Fabbri F.; Cinquanta E.; Kaplan D.; Longo M.; Lazzarini L.; Molle A.; Swaminathan V.; Salviati G.
Studies of two-dimensional h-BN and MoS2 for potential diffusion barrier application in copper interconnect technology
2017 Lo, Chunli; Catalano, Massimo; Smithe Kirby, K H; Wang, Luhua; Zhang, Shengjiao; Pop, Eric; Kim Moon, J; Chen, Zhihong
Tunable broadband light emission from graphene
2021 Ghirardini L.; Pogna E.A.A.; Soavi G.; Tomadin A.; Biagioni P.; Dal Conte S.; Mignuzzi S.; De Fazio D.; Taniguchi T.; Watanabe K.; Duo L.; Finazzi M.; Polini M.; Ferrari A.C.; Cerullo G.; Celebrano M.
Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
2017 Di Bartolomeo, Antonio; Giubileo, Filippo; Luongo, Giuseppe; Iemmo, Laura; Martucciello, Nadia; Niu, Gang; Fraschke, Mirko; Skibitzki, Oliver; Schroeder, Thomas; Lupina, Grzegorz
Two-dimensional silicon: the advent of silicene
2016 Grazianetti, Carlo; Cinquanta, EUGENIO LUIGI; Molle, Alessandro
Valley polarized relaxation and upconversion luminescence from Tamm-plasmon trion-polaritons with a MoSe2 monolayer
2017 Lundt, N; Nagler, P; Nalitov, A; Klembt, S; Wurdack, M; Stoll, S; T H, Harder; Betzold, S; Baumann, V; A V, Kavokin; Schueller, C; Korn, T; Hoefling, S; Schneider, C
Weak localization in electric-double-layer gated few-layer graphene
2017 Gonnelli, R S; Piatti, E; Sola, A; Tortello, M; Dolcini, F; Galasso, S; Nair, J R; Gerbaldi, C; Cappelluti, E; Bruna, M; Ferrari, A C
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| On the role of nano-confined water at the 2D/SiO2 interface in layer number engineering of exfoliated MoS2 via thermal annealing | 1-gen-2020 | Palleschi, S; D'Olimpio, G; Benassi, P; Nardone, M; Alfonsetti, R; Moccia, G; Renzelli, M; Cacioppo, Oa; Hichri, A; Jaziri, S; Politano, A; Ottaviano, L | |
| Optical dielectric function of two-dimensional WS2 on epitaxial graphene | 1-gen-2020 | Magnozzi, M; Ferrera, M; Piccinini, G; Pace, S; Forti, S; Fabbri, F; Coletti, C; Bisio, F; Canepa, M | |
| Photocarrier-induced band-gap renormalization and ultrafast charge dynamics in black phosphorus | 1-gen-2019 | Roth, S.; Crepaldi, A.; Puppin, M.; Gatti, G.; Bugini, D.; Grimaldi, I; Barrilot, T. R.; Arrell, C. A.; Frassetto, F.; Poletto, L.; Chergui, M.; Marini, A.; Grioni, M. | |
| Production and processing of graphene and related materials | 1-gen-2020 | Backes, C; Abdelkader, ; A, M; Alonso, C; Andrieuxledier, A; Arenal, R; Azpeitia, J; Balakrishnan, N; Banszerus, L; Barjon, J; Bartali, R; Bellani, S; Berger, C; Berger, R; Ortega, ; M M, B; Bernard, C; Beton, ; P, H; Beyer, A; Bianco, A; Bggild, P; Bonaccorso, F; Barin, ; G, B; Botas, C; Bueno, ; R, A; Carriazo, D; Castellanosgomez, A; Christian, M; Ciesielski, A; Ciuk, T; Cole, ; M, T; Coleman, J; Coletti, C; Crema, L; Cun, H; Dasler, D; De Fazio, D; Dez, N; Drieschner, S; Duesberg, ; G, S; Fasel, R; Feng, X; Fina, A; Forti, S; Galiotis, C; Garberoglio, G; Garca, ; J, M; Garrido, ; J, A; Gibertini, M; Glzhuser, A; Gmez, J; Greber, T; Hauke, F; Hemmi, A; Hernandezrodriguez, I; Hirsch, A; Hodge, ; S, A; Huttel, Y; Jepsen, ; P, U; Jimenez, I; Kaiser, U; Kaplas, T; Kim, H; Kis, A; Papagelis, K; Kostarelos, K; Krajewska, A; Lee, K; Li, C; Lipsanen, H; Liscio, A; Lohe, ; M, R; Loiseau, A; Lombardi, L; Lpez, ; M, F; Martin, O; Martn, C; Martnez, L; Martingago, ; J, A; Martnez, ; J, I; Marzari, N; Mayoral, A; Mcmanus, J; Melucci, M; Mndez, J; Merino, C; Merino, P; Meyer, ; A, P; Miniussi, E; Miseikis, V; Mishra, N; Morandi, V; Munuera, C; Muoz, R; Nolan, H; Ortolani, L; Ott, ; A, K; Palacio, I; Palermo, V; Parthenios, J; Pasternak, I; Patane, A; Prato, M; Prevost, H; Prudkovskiy, V; Pugno, N; Rojo, T; Rossi, A; Ruffieux, P; Samor, P; Schu, L; Setijadi, E; Seyller, T; Speranza, G; Stampfer, C; Stenger, I; Strupinski, W; Svirko, Y; Taioli, S; Teo, ; K B, K; Testi, M; Tomarchio, F; Tortello, M; Treossi, E; Turchanin, A; Vazquez, E; Villaro, E; Whelan, ; P, R; Xia, Z; Yakimova, R; Yang, S; Yazdi, ; G, R; Yim, C; Yoon, D; Zhang, X; Zhuang, X; Colombo, L; Ferrari, ; A, C; Garciahernandez, ; M, | |
| Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor | 1-gen-2015 | Miseikis V.; Convertino D.; Mishra N.; Gemmi M.; Mashoff T.; Heun S.; Haghighian N.; Bisio F.; Canepa M.; Piazza V.; Coletti C. | |
| Reduction and shaping of graphene-oxide by laser-printing for controlled bone tissue regeneration and bacterial killing | 1-gen-2017 | Palmieri, V.; Barba, M.; Di Pietro, L.; Gentilini, S.; Braidotti, M. C.; Ciancico, C.; Bugli, F.; Ciasca, G.; Larciprete, R.; Lattanzi, W.; Sanguinetti, M.; De Spirito, M.; Conti, C.; Papi, M. | |
| Site-specific symmetry sensitivity of angle-resolved photoemission spectroscopy in layered palladium diselenide | 1-gen-2021 | Cattelan, M; Sayers, C J; Wolverson, D; Carpene, E | |
| STM study of exfoliated few layer black phosphorus annealed in ultrahigh vacuum | 1-gen-2019 | Kumar, A; Telesio, F; Forti, S; Altemimy, A; Coletti, C; Serranoruiz, M; Caporali, M; Peruzzini, M; Beltram, F; Heun, S | |
| Strain effects in monolayer iron-chalcogenide superconductors | 1-gen-2015 | Tresca C.; Ricci F.; Profeta G. | |
| Strong-coupling charge density wave in monolayer TiSe2 | 1-gen-2021 | Watson, Matthew D.; Rajan, Akhil; Antonelli, Tommaso; Underwood, Kaycee; Markovic, Igor; Mazzola, Federico; Clark, Oliver J.; Siemann, GesaRoxanne; Biswas, Deepnarayan; Hunter, Andrew; Jandura, Sven; Reichstetter, Janika; McLaren, Martin; Le Fevre, Patrick; Vinai, Giovanni; King, Philip D. C. | |
| Structural, optical and compositional stability of MoS2 multi-layer fl akes under high dose electron beam irradiation | 1-gen-2016 | Rotunno E.; Fabbri F.; Cinquanta E.; Kaplan D.; Longo M.; Lazzarini L.; Molle A.; Swaminathan V.; Salviati G. | |
| Studies of two-dimensional h-BN and MoS2 for potential diffusion barrier application in copper interconnect technology | 1-gen-2017 | Lo, Chunli; Catalano, Massimo; Smithe Kirby, K H; Wang, Luhua; Zhang, Shengjiao; Pop, Eric; Kim Moon, J; Chen, Zhihong | |
| Tunable broadband light emission from graphene | 1-gen-2021 | Ghirardini L.; Pogna E.A.A.; Soavi G.; Tomadin A.; Biagioni P.; Dal Conte S.; Mignuzzi S.; De Fazio D.; Taniguchi T.; Watanabe K.; Duo L.; Finazzi M.; Polini M.; Ferrari A.C.; Cerullo G.; Celebrano M. | |
| Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device | 1-gen-2017 | Di Bartolomeo, Antonio; Giubileo, Filippo; Luongo, Giuseppe; Iemmo, Laura; Martucciello, Nadia; Niu, Gang; Fraschke, Mirko; Skibitzki, Oliver; Schroeder, Thomas; Lupina, Grzegorz | |
| Two-dimensional silicon: the advent of silicene | 1-gen-2016 | Grazianetti, Carlo; Cinquanta, EUGENIO LUIGI; Molle, Alessandro | |
| Valley polarized relaxation and upconversion luminescence from Tamm-plasmon trion-polaritons with a MoSe2 monolayer | 1-gen-2017 | Lundt, N; Nagler, P; Nalitov, A; Klembt, S; Wurdack, M; Stoll, S; T H, Harder; Betzold, S; Baumann, V; A V, Kavokin; Schueller, C; Korn, T; Hoefling, S; Schneider, C | |
| Weak localization in electric-double-layer gated few-layer graphene | 1-gen-2017 | Gonnelli, R S; Piatti, E; Sola, A; Tortello, M; Dolcini, F; Galasso, S; Nair, J R; Gerbaldi, C; Cappelluti, E; Bruna, M; Ferrari, A C |
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