ALI, AWAIS
ALI, AWAIS
Istituto Officina dei Materiali - IOM -
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Self-Rectifying Gr/TMDC Heterostructures: Candidates for Resistive Switching Memory Devices
2024 Aftab, Jamshed; Ali, Awais; Mehmood, Shahid; Bhopal, Muhammad Fahad; ur Rehman, Muhammad Zaka; Ali, Junaid; Cepek, Cinzia; Khan, Muhammad Farooq; Lee, Doowon; Wang, Minqiang; Bhatti, Arshad Saleem
Defect states in ZnO/SnO2 composite nanostructures (CNs) for possible facilitating role in carrier transport across the junction
2021 Sabeen, Madiha; Aziz, Liaquat; Nazir, Tahir; Mehmood, Shahid; Bhopal, Muhammad Fahad; Ali, Awais; Saeed, Faisal; Nasim, Faisal; Cepek, C.; Bhardwaj, S.; Ul-Hamid, Anwar; Bhatti, Arshad Saleem
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Self-Rectifying Gr/TMDC Heterostructures: Candidates for Resistive Switching Memory Devices | 1-gen-2024 | Aftab, Jamshed; Ali, Awais; Mehmood, Shahid; Bhopal, Muhammad Fahad; ur Rehman, Muhammad Zaka; Ali, Junaid; Cepek, Cinzia; Khan, Muhammad Farooq; Lee, Doowon; Wang, Minqiang; Bhatti, Arshad Saleem | |
| Defect states in ZnO/SnO2 composite nanostructures (CNs) for possible facilitating role in carrier transport across the junction | 1-gen-2021 | Sabeen, Madiha; Aziz, Liaquat; Nazir, Tahir; Mehmood, Shahid; Bhopal, Muhammad Fahad; Ali, Awais; Saeed, Faisal; Nasim, Faisal; Cepek, C.; Bhardwaj, S.; Ul-Hamid, Anwar; Bhatti, Arshad Saleem |