CNR Institutional Research Information System

SATTA, ALESSANDRA

SATTA, ALESSANDRA  

Istituto Officina dei Materiali - IOM - Sede Secondaria Monserrato (CA)  

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Risultati 1 - 14 di 14 (tempo di esecuzione: 0.031 secondi).
Titolo Data di pubblicazione Autore(i) File
Promising Perspectives on the Use of Fullerenes as Efficient Containers for Beryllium Atoms 1-gen-2023 Bodrenko, Igor; Satta, Alessandra; Caddeo, Claudia; Cozzolino, Giacomo; Milenkovic, Stefan; Ceccarelli, Matteo; Mattoni, Alessandro
Corrigendum to "Reactivity of Cd-yellow pigments: Role of surface defects" [Microchem. J. 137 (2018) 502-508](S0026265X17309013)(10.1016/j.microc.2017.12.013) 1-gen-2018 Giacopetti L.; Satta A.
First principles study of the optical emission of cadmium yellow: Role of cadmium vacancies 1-gen-2018 Giacopetti, L; Nevin, A; Comelli, D; Valentini, G; Nardelli, Mb; Satta, A
Reactivity of Cd-yellow pigments: Role of surface defects 1-gen-2018 Giacopetti, Laura; Satta, Alessandra
Degradation of Cd-yellow paints: Ab initio study of native defects in {10.0} surface CdS 1-gen-2016 Giacopetti, Laura; Satta, Alessandra
Influence of HCOO- on Calcite Growth from First-Principles 1-gen-2015 Addari, Danilo; Satta, Alessandra
Degradation of Cd-yellow Paints: ab initio study of the adsorption of oxygen and water on {10.0} CdS surface 1-gen-2014 Giacopetti, Laura; Satta, Alessandra
Dissociation of water and Acetic acid on PbS from first principles 1-gen-2008 Alessandra Satta; Paolo Ruggerone; Giovanni B. de Giudici
Depth resolved study of impurity sites in low energy ion implanted As in Si 1-gen-2007 d'Acapito, F; Milita, S; Satta, A; Colombo, L
Ab initio structures of AsmV complexes and the simulation of Rutherford backscattering channeling spectra in heavily As-doped crystalline silicon 1-gen-2005 Satta, A; Albertazzi, E; Lulli, G; Colombo, L
Atomistic simulation of ion channeling in heavily doped Si : As 1-gen-2005 Satta A.; Albertazzi E.; Bianconi M.; Lulli G.; Balboni S.; Colombo L.
Channeling characterization of defects in silicon: an atomistic approach 1-gen-2005 Bianconi, M; Albertazzi, E; Balboni, S; Colombo, L; Lulli, G; Satta, A
Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra 1-gen-2005 Lulli G.; Albertazzi E.; Bianconi M.; Satta A.; Balboni S.; Colombo L.; Uguzzoni A.
Interpretation of ion-channeling spectra in ion-implanted Si with models of structurally relaxed point defects and clusters 1-gen-2004 Lulli, G; Albertazzi, E; Bianconi, M; Satta, A; Balboni, S; Colombo, L