ZANOTTI, LUCIO
ZANOTTI, LUCIO
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
A method for an accurate determination of stoichiometry deviations in CdTe and CdZnTe bulk crystals
2005 Zappettini A.; Waldner R.; Bissoli F.; Zha M.; Zanotti L.; Paorici C.
A new approach for the synthesis of ZnO nanoparticles sensitized with metal chalcogenides
2009 Zanotti, L; Zappettini, A; Villani, M; Calestani, D; Mosca, R
A new process for synthesizing high purity stoichiometric Cadmium telluride
2000 Zappettini, A; Görög, T; Zha, M; Zanotti, L; Zuccalli, G; Paorici, C
A telemetric system for in-situ growth rate measurement of urotropine crystals
2003 Zha, M; Razzetti, C; Zanotti, L; Bassano, E; Castagnolo, D; Paorici, C
Accordo di confidenzialità su attività di ricerca su HTS Coated Conductors
2007 Gilioli E.; Zanotti L.; Zannella S.; Bock J.
AO - 99-035 + AO - 2004-102 Crystallization of CdTe and related Compounds Final Report - April 2009
2009 Fiederle M.; Zappettini A.; Zanotti L.
Apparato per la misura delle pressioni dei vapori di Cadmio e Tellurio in equilibrio con CdTe ad alta temperatura tramite assorbimento ottico
2003 Zappettini, A; Bissoli, F; Zha, M; Zanotti, L
As grown and artificial mosaic GaAs crystals for hard x-ray astronomy
2010 Buffagni, E; Ferrari, C; Zanotti, L; Zappettini, A
Boron oxide encapsulated Bridgman growth of high purity high resistivity CdTe crystals
2004 Zha, M; Zappettini, A; Bissoli, F; Zanotti, L; Corregidor, V; Dieguez, E
Boron Oxide encapsulated Bridgman growth of high-purity high-resistivity Cadmium Telluride crystals
2003 Zha, M; Bissoli, F; Zappettini, A; Zanotti, L
Boron Oxide Encapsulated Vertical Bridgman CdZnTe Crystals For X-Ray Detector Applications
2008 Zappettini, A; Zha, M; Calestani, D; Marchini, L; Zanotti, L; Paorici, C
Boron oxide encapsulated vertical Bridgman grown CdZnTe crystals as X-ray detector material
2008 Zappettini, A; Zha, M; Marchini, L; Calestani, D; Mosca, R; Gombia, E; Zanotti, L; Zanichelli, M; Pavesi, M; Auricchio, N; Caroli, E
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth
2007 Zappettini, A; Zha, M; Pavesi, M; Zanichelli, M; Bissoli, F; Zanotti, L; Auricchio, N; Caroli, E
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth
2006 Zappettini, A; Zha, M; Pavesi, M; Bissoli, F; Zanotti, L
Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman technique
2007 Zappettini, A; Zha, M; Pavesi, M; Zanotti, L
Crystal defects and optical transition in high purity, high resistivity cdte for device applications
2002 Armani N.; Ferrari C.; Salviati G.; Bissoli F.; Zha M.; Zanotti L.
Crystal growth of undoped semi-insulating cdte
2002 Zha M.; Gorog T.; Zappettini A.; Bissoli F.; Zanotti L.; Paorici C.
Deep level characterization of undoped CdTe crystals
2003 Gombia E.; Bissoli F.; Zha M.; Zappettini A.; Gorog T.; Zanotti L.
Defect study of SnO2 nanostructures by cathodoluminescence analysis: Application to nanowires
2007 Prades, JD ; Arbiol, J ; Cirera, A ; Morante, JR ; Avella, M ; Zanotti, L ; Comini, E ; Faglia, G ; Sberveglieri, G
Defect-induced luminescence in high resistivity high-purity undoped CdTe crystals
2002 Armani, N; Ferrari, C; Salviati, G; Bissoli, F; Zha, M; Zappettini, A; Zanotti, L