FERRARI, SANDRO
FERRARI, SANDRO
INFM (attivo dal 18/11/1923 al 31/12/2021)
Atomic layer deposited Al2O3 as a capping layer for polymer based transistors
2007 Ferrari, S; Perissinotti, F; Peron, E; Fumagalli, L; Natali, D; Sampietro, M
Interface engineering for Ge metal-oxide-semiconductor devices
2007 Dimoulas, A; Brunco, Dp; Ferrari, S; Seo, Jw; Panayiotatos, Y; Sotiropoulos, A; Conard, T; Caymax, M; Spiga, S; Fanciulli, M; Dieker, C; Evangelou, Ek; Galata, S; Houssa, M; Heyns, Mm
Diffusion reaction of oxygen in HfO2/SiO2/Si stacks
2006 Ferrari, S; Fanciulli, M
Electron density profile at the interface of SiO2/Si(001)
2006 Banerjee, S; Ferrari, S; Piagge, R; Spadoni, S
Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy
2006 Ferrari, S; Spiga, S; Wiemer, C; Fanciulli, M; Dimoulas, A
Effects of the oxygen precursor on the electrical and structural propertiesof HfO2 films grown by atomic layer deposition on Ge
2005 Spiga, S; Wiemer, C; Tallarida, G; Scarel, G; Ferrari, S; Seguini, G; Fanciulli, M
Combining grazing incidence X-ray diffraction and X-ray reflectivity for the evaluation of the structural evolution of HfO2 thin films with annealing
2004 Wiemer, C; Ferrari, S; Fanciulli, M; Pavia, G; Lutterotti, L
Ru and RuO2 electrodes for advanced CMOS technology
2004 Frohlich K.; Husekova K.; Machajdik D.; Hooker J.; Fanciulli M.; Ferrari S.; Wiemer C.; Dimoulas A.; Vellianitis G.; Roozeboom F.
Trends of structural and electrical properties in atomic layer deposited HfO2 films
2004 G. Scarel; S. Spiga; C. Wiemer; G. Tallarida; S. Ferrari; M. Fanciulli
Monitoring the formation of Sb nanocrystals in SiO2 by grazing incidence x-ray techniques
2003 D. T. Dekadjevi; C. Wiemer; S. Spiga; S. Ferrari;M. FanciulliG. PaviaA. Gibaud
A comparison of Ti/Pt and TiN/Pt electrodes used with ferroelectric SrBi2Ta2O9 films
2002 Watts B.E.; Leccabue F.; Guerri S.; Severi M.; Fanciulli M.; Ferrari S.; Tallarida G.; Morandi C.
The influence of low temperature baking on the properties of SrBi2Ta2O9 films from metallorganic solutions
2001 Bewatts, ; Fleccabue, ; Fanciulli, M; Ferrari, S; Tallarida, G; Parisoli, D; Morandi, C
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Atomic layer deposited Al2O3 as a capping layer for polymer based transistors | 1-gen-2007 | Ferrari, S; Perissinotti, F; Peron, E; Fumagalli, L; Natali, D; Sampietro, M | |
| Interface engineering for Ge metal-oxide-semiconductor devices | 1-gen-2007 | Dimoulas, A; Brunco, Dp; Ferrari, S; Seo, Jw; Panayiotatos, Y; Sotiropoulos, A; Conard, T; Caymax, M; Spiga, S; Fanciulli, M; Dieker, C; Evangelou, Ek; Galata, S; Houssa, M; Heyns, Mm | |
| Diffusion reaction of oxygen in HfO2/SiO2/Si stacks | 1-gen-2006 | Ferrari, S; Fanciulli, M | |
| Electron density profile at the interface of SiO2/Si(001) | 1-gen-2006 | Banerjee, S; Ferrari, S; Piagge, R; Spadoni, S | |
| Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy | 1-gen-2006 | Ferrari, S; Spiga, S; Wiemer, C; Fanciulli, M; Dimoulas, A | |
| Effects of the oxygen precursor on the electrical and structural propertiesof HfO2 films grown by atomic layer deposition on Ge | 1-gen-2005 | Spiga, S; Wiemer, C; Tallarida, G; Scarel, G; Ferrari, S; Seguini, G; Fanciulli, M | |
| Combining grazing incidence X-ray diffraction and X-ray reflectivity for the evaluation of the structural evolution of HfO2 thin films with annealing | 1-gen-2004 | Wiemer, C; Ferrari, S; Fanciulli, M; Pavia, G; Lutterotti, L | |
| Ru and RuO2 electrodes for advanced CMOS technology | 1-gen-2004 | Frohlich K.; Husekova K.; Machajdik D.; Hooker J.; Fanciulli M.; Ferrari S.; Wiemer C.; Dimoulas A.; Vellianitis G.; Roozeboom F. | |
| Trends of structural and electrical properties in atomic layer deposited HfO2 films | 1-gen-2004 | G. Scarel; S. Spiga; C. Wiemer; G. Tallarida; S. Ferrari; M. Fanciulli | |
| Monitoring the formation of Sb nanocrystals in SiO2 by grazing incidence x-ray techniques | 1-gen-2003 | D. T. Dekadjevi; C. Wiemer; S. Spiga; S. Ferrari;M. FanciulliG. PaviaA. Gibaud | |
| A comparison of Ti/Pt and TiN/Pt electrodes used with ferroelectric SrBi2Ta2O9 films | 1-gen-2002 | Watts B.E.; Leccabue F.; Guerri S.; Severi M.; Fanciulli M.; Ferrari S.; Tallarida G.; Morandi C. | |
| The influence of low temperature baking on the properties of SrBi2Ta2O9 films from metallorganic solutions | 1-gen-2001 | Bewatts, ; Fleccabue, ; Fanciulli, M; Ferrari, S; Tallarida, G; Parisoli, D; Morandi, C |