CNR Institutional Research Information System

ORANI, DANIELA

ORANI, DANIELA  

Istituto Officina dei Materiali - IOM -  

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Titolo Data di pubblicazione Autore(i) File
NFFA Project Project No. FP7 - 212348 - D5.3 NFFA book 1-gen-2011 L. Fonseca; C. Africh; R. Ciancio; R. Ferranti; D. Orani
NFFA Project No. FP7 212348 - D3.4 Design Study of user-oriented Advanced Analysis and Metrology Facilities 1-gen-2010 Africh, C; Ciancio, R; Gotter, R; Orani, D
NFFA Project No. FP7 212348 - D3.7 Scheme for Technical Synergies 1-gen-2010 C. David; J. Gobrecht; K. Jungnikl; E. LoraTamayo; L. Fonseca CSICCNM; R. Gotter; D. Orani; R. Ciancio CNRIOM; G. Arthur STFC
NFFA Project No. FP7 212348 - D4.5 Assessment of the possible INTEGRATION of existing facilities that could be integrated in NFFA-RI in view of the implementation of the DEMONSTRATOR PHASE of NFFA 1-gen-2010 G. Rossi; R. Gotter; D. Orani; R. Ciancio; C. Africh; G. Arthur; E. LoraTamayo; L. Fonseca; H. Amenitsch; C. David
Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1 × 1 surfaces 1-gen-2005 Orani, D; Piccin, M; Rubini, S; Pelucchi, E; Bonanni, B; Franciosi, A; Passaseo, A; Cingolani, R; Khan, A
Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1x1 surfaces 1-gen-2005 Orani D; Piccin M; Rubini S; Pelucchi E; Bonanni B; Franciosi A; Passaseo A; Cingolani R; Khan A
Silicon clustering in Si-GaAs ?-doped layers and superlattices 1-gen-2002 F. Boscherini;N. FerrettiB. Bonanni; D. Orani; S. Rubini; M. Piccin;A. Franciosi
Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures 1-gen-2001 Bonanni, B; Pelucchi, E; Rubini, S; Orani, D; Franciosi, A; Garulli, A; Parisini, A
High spatial resolution studies of microscopic capacitors in GaAs 1-gen-2001 Furlanetto, D; Orani, D; Rubini, S; Modesti, S; Carlino, E; Franciosi, A
Metal/III-V diodes engineered by means of Si interlayers: Interface reactions versus local interface dipoles 1-gen-2001 B. Bonanni; D. Orani; M. Lazzarino; S. Rubini;A. Franciosi
Reflectionless tunneling in planar Nb/GaAs hybrid junctions 1-gen-2001 Francesco Giazotto; Marco Cecchini; Pasqualantonio Pingue; Fabio Beltram; Marco Lazzarino; Daniela Orani; Silvia Rubini;Alfonso Franciosi
Reflectionless tunneling in planar Nb/GaAs hybrid junctions 1-gen-2001 Giazotto, F; Cecchini, M; Pingue, P; Beltram, F; Lazzarino, M; Orani, D; Rubini, S; Franciosi, Alfonso; A,
Resonant transport in Nb/GaAs/AlGaAs heterostructures: Realization of the de Gennes-Saint-James model 1-gen-2001 Giazotto, F; Pingue, P; Beltram, F ; Lazzarino, M ; Orani, D ; Rubini, S ; Franciosi, A
Resonant transport in Nb/GaAs/AlGaAs heterostructures: Realization of the de Gennes-Saint-James model 1-gen-2001 Giazotto F;Pingue P;Beltram F;Lazzarino M;Orani D;Rubini S;Franciosi; A
Tunable Schottky barrier contacts to InxGa1-xAs 1-gen-2000 C. Marinelli; L. Sorba; M. Lazzarino; D. Kumar; E. Pelucchi; B. H. Müller; D. Orani; S. Rubini; A. Franciosi; S. De Franceschi;F. Beltram
Ohmic versus rectifying contacts through interfacial dipoles: Al/InxGa1-xAs 1-gen-1999 C. Marinelli; L. Sorba; B.H. Müller; D. Kumar; D. Orani; S. Rubini; A. Franciosi; S. De Franceschi; M. Lazzarino; F. Beltram
Phonon study of temperature evolution of strain in GaAs/Si (001)) and GaAs/Si (111) heterostructures 1-gen-1999 L. G. Quagliano; Z. Sobiesierski; D. Orani; A. Ricci
Journal Raman Spectroscopy 1-gen-1998 L. G. Quagliano; B. Jusserand;D. Orani
Raman study of of highly strained quantum well 1-gen-1997 Quagliano L. G.; D. Orani; A.Ricci
Phonons in single thin epitaxial layers of InAs on InP 1-gen-1996 Quagliano, L; Jusserand, B; Orani, D