CNR Institutional Research Information System

ORANI, DANIELA

ORANI, DANIELA  

Istituto Officina dei Materiali - IOM -  

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Risultati 1 - 16 di 16 (tempo di esecuzione: 0.036 secondi).
Titolo Data di pubblicazione Autore(i) File
Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1 × 1 surfaces 1-gen-2005 Orani, D; Piccin, M; Rubini, S; Pelucchi, E; Bonanni, B; Franciosi, A; Passaseo, A; Cingolani, R; Khan, A
Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1x1 surfaces 1-gen-2005 Orani D; Piccin M; Rubini S; Pelucchi E; Bonanni B; Franciosi A; Passaseo A; Cingolani R; Khan A
Cross sectional studies of buried semiconductor interfaces by means of photoemission microscopy 1-gen-2002 F. Barbo; M. Bertolo; A. Bianco; G. Cautero; S. Fontana; T. K. Johal; S. La Rosa;R. C. Purandare;N. SvetchnikovA. Franciosi; D. Orani; M. Piccin;S. RubiniR. Cimino
Silicon clustering in Si-GaAs ?-doped layers and superlattices 1-gen-2002 F. Boscherini;N. FerrettiB. Bonanni; D. Orani; S. Rubini; M. Piccin;A. Franciosi
Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures 1-gen-2001 Bonanni, B; Pelucchi, E; Rubini, S; Orani, D; Franciosi, A; Garulli, A; Parisini, A
Metal/III-V diodes engineered by means of Si interlayers: Interface reactions versus local interface dipoles 1-gen-2001 B. Bonanni; D. Orani; M. Lazzarino; S. Rubini;A. Franciosi
Reflectionless tunneling in planar Nb/GaAs hybrid junctions 1-gen-2001 Giazotto, F; Cecchini, M; Pingue, P; Beltram, F; Lazzarino, M; Orani, D; Rubini, S; Franciosi, Alfonso; A,
Reflectionless tunneling in planar Nb/GaAs hybrid junctions 1-gen-2001 Giazotto, Francesco; Cecchini, Marco; Pingue, Pasqualantonio; Beltram, Fabio; Lazzarino, Marco; Orani, Daniela; Rubini, Silvia; Franciosi, Alfonso
Resonant transport in Nb/GaAs/AlGaAs heterostructures: Realization of the de Gennes-Saint-James model 1-gen-2001 Giazotto, F; Pingue, P; Beltram, F; Lazzarino, M; Orani, D; Rubini, S; Franciosi, A
Resonant transport in Nb/GaAs/AlGaAs heterostructures: Realization of the de Gennes-Saint-James model 1-gen-2001 Giazotto F;Pingue P;Beltram F;Lazzarino M;Orani D;Rubini S;Franciosi; A
Tunable Schottky barrier contacts to InxGa1-xAs 1-gen-2000 C. Marinelli; L. Sorba; M. Lazzarino; D. Kumar; E. Pelucchi; B. H. Müller; D. Orani; S. Rubini; A. Franciosi; S. De Franceschi;F. Beltram
Ohmic versus rectifying contacts through interfacial dipoles: Al/InxGa1-xAs 1-gen-1999 Marinelli, C; Sorba, L; Müller, Bh; Kumar, D; Orani, D; Rubini, S; Franciosi, A; De Franceschi, S; Lazzarino, M; Beltram, F
Phonon study of temperature evolution of strain in GaAs/Si (001)) and GaAs/Si (111) heterostructures 1-gen-1999 L. G. Quagliano; Z. Sobiesierski; D. Orani; A. Ricci
Journal Raman Spectroscopy 1-gen-1998 L. G. Quagliano; B. Jusserand;D. Orani
Phonons in single thin epitaxial layers of InAs on InP 1-gen-1996 Quagliano, L; Jusserand, B; Orani, D
Surface-enhanced Raman scattering from molecules adsorbed on GaAs surfaces 1-gen-1996 L. G. Quagliano; D. Orani