CAVALLINI, ANNA
CAVALLINI, ANNA
Cathodoluminescence characterization of beta-SiC nanowires and surface-related silicon dioxide
2008 Fabbri F.; Cavallini A.; Attolini G.; Rossi F.; Salviati G.; Dierre B.; Fukata N.; Sekiguchi T.
Investigation on localized states in GaN nanowires
2008 Polenta L.; Rossi M.; Cavallini A.; Calarco R.; Marso M.; Meijers R.; Richter T.; Stoica T.; Lüth H.
Silicon carbide and its use as a radiation detector material
2008 Nava, F; Bertuccio, G; Cavallini, A; Vittone, E
Defect distribution along single GaN nanowhiskers
2006 Cavallini, A; Polenta, L; Rossi, M; Richter, T; Marso, M; Meijers, R; Calarco, R; Luth, H
Yellow and green bands in GaN by resolved spectral photoconductivity
2005 Castaldini A; Cavallini A; Polenta L;
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels
2004 Meneghesso, G; Levada, S; Zanoni, E; Salviati, G; Armani, N; Rossi, F; Pavesi, M; Manfredi, M; Cavallini, A; Castaldini, A; Du, S; Eliashevich, I
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs
2004 Salviati G.; Rossi F.; Armani N.; Pavesi M.; Manfredi M.; Meneghesso G.; Zanoni E.; Castaldini A.; Cavallini A.
Electrical and optical properties of defects in proton-irradiated gan epilayers
2002 Castaldini, A; Cavallini, A; Polenta, L; Armani, N; Salviati, G
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Cathodoluminescence characterization of beta-SiC nanowires and surface-related silicon dioxide | 1-gen-2008 | Fabbri F.; Cavallini A.; Attolini G.; Rossi F.; Salviati G.; Dierre B.; Fukata N.; Sekiguchi T. | |
| Investigation on localized states in GaN nanowires | 1-gen-2008 | Polenta L.; Rossi M.; Cavallini A.; Calarco R.; Marso M.; Meijers R.; Richter T.; Stoica T.; Lüth H. | |
| Silicon carbide and its use as a radiation detector material | 1-gen-2008 | Nava, F; Bertuccio, G; Cavallini, A; Vittone, E | |
| Defect distribution along single GaN nanowhiskers | 1-gen-2006 | Cavallini, A; Polenta, L; Rossi, M; Richter, T; Marso, M; Meijers, R; Calarco, R; Luth, H | |
| Yellow and green bands in GaN by resolved spectral photoconductivity | 1-gen-2005 | Castaldini A; Cavallini A; Polenta L; | |
| Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels | 1-gen-2004 | Meneghesso, G; Levada, S; Zanoni, E; Salviati, G; Armani, N; Rossi, F; Pavesi, M; Manfredi, M; Cavallini, A; Castaldini, A; Du, S; Eliashevich, I | |
| Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs | 1-gen-2004 | Salviati G.; Rossi F.; Armani N.; Pavesi M.; Manfredi M.; Meneghesso G.; Zanoni E.; Castaldini A.; Cavallini A. | |
| Electrical and optical properties of defects in proton-irradiated gan epilayers | 1-gen-2002 | Castaldini, A; Cavallini, A; Polenta, L; Armani, N; Salviati, G |