GOLSANAMLOU, ZAHRA
 Distribuzione geografica
Continente #
EU - Europa 17
NA - Nord America 2
AS - Asia 1
Totale 20
Nazione #
IT - Italia 14
US - Stati Uniti d'America 2
BG - Bulgaria 1
FI - Finlandia 1
SE - Svezia 1
SG - Singapore 1
Totale 20
Città #
Ashburn 1
Forest City 1
Helsinki 1
Singapore 1
Sofia 1
Totale 5
Nome #
First-Principles Design of Ohmic FET Devices from 2D Transition Metal Dichalcogenides 9
Correction: Theoretical Analysis of a 2D Metallic/Semiconducting Transition-Metal Dichalcogenide NbS2//WSe2 Hybrid Interface (Advanced Theory and Simulations, (2020), 3, 12, (2000164), 10.1002/adts.202000164) 7
Theoretical Analysis of a 2D Metallic/Semiconducting Transition-Metal Dichalcogenide NbS2//WSe2 Hybrid Interface 3
Vertical Heterostructures between Transition-Metal Dichalcogenides--A Theoretical Analysis of the NbS2/WSe2 Junction 1
Totale 20
Categoria #
all - tutte 113
article - articoli 113
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 226


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202418 0 0 0 0 0 0 0 0 3 0 6 9
2024/20252 1 1 0 0 0 0 0 0 0 0 0 0
Totale 20