GOLSANAMLOU, ZAHRA
 Distribuzione geografica
Continente #
AS - Asia 112
NA - Nord America 73
EU - Europa 54
SA - Sud America 44
AF - Africa 3
Totale 286
Nazione #
US - Stati Uniti d'America 66
SG - Singapore 49
BR - Brasile 35
IT - Italia 35
CN - Cina 23
VN - Vietnam 18
HK - Hong Kong 11
AR - Argentina 5
FR - Francia 5
CA - Canada 4
FI - Finlandia 3
GB - Regno Unito 3
ID - Indonesia 2
MX - Messico 2
PE - Perù 2
SE - Svezia 2
TW - Taiwan 2
AT - Austria 1
BD - Bangladesh 1
BG - Bulgaria 1
DE - Germania 1
EC - Ecuador 1
EG - Egitto 1
ES - Italia 1
IE - Irlanda 1
IQ - Iraq 1
JO - Giordania 1
JP - Giappone 1
KE - Kenya 1
KH - Cambogia 1
LT - Lituania 1
MA - Marocco 1
PK - Pakistan 1
PR - Porto Rico 1
UZ - Uzbekistan 1
VE - Venezuela 1
Totale 286
Città #
Singapore 30
Santa Clara 26
Hong Kong 10
Ashburn 9
Beijing 7
Ho Chi Minh City 7
Hefei 6
Modena 6
Rome 6
Hanoi 5
Lauterbourg 4
Cascina 3
São Paulo 3
Council Bluffs 2
Cà Mau 2
Dallas 2
Haiphong 2
Lappeenranta 2
Los Angeles 2
Amman 1
Anápolis 1
Arapongas 1
Araçatuba 1
Barreiras 1
Belo Horizonte 1
Berazategui 1
Birigui 1
Boston 1
Brasília 1
Broussard 1
Buffalo 1
Caculé 1
Caicó 1
Cairo 1
Calgary 1
Caucaia 1
Chipping Norton 1
Denver 1
Dhaka 1
Dublin 1
Erbil 1
Feira Nova 1
Forest City 1
Frankfurt am Main 1
Garanhuns 1
Goiânia 1
Guangzhou 1
Guarulhos 1
Guayaquil 1
Helsinki 1
Ibiúna 1
Islamabad 1
Itaquaquecetuba 1
Ituzaingó 1
Jaboticabal 1
Jakarta 1
Lençóis Paulista 1
Lima 1
Lima region 1
Lodi 1
London 1
Manassas 1
Manchester 1
Mariano Moreno 1
Mayagüez 1
Mexico City 1
Mocambo 1
Montreal 1
Nairobi 1
Nazaré da Mata 1
Orillia 1
Osasco 1
Paracambi 1
Pell City 1
Phnom Penh 1
Phoenix 1
Querétaro 1
Reus 1
Ribeira do Pombal 1
Rio de Janeiro 1
Roubaix 1
Salvador 1
San Fernando 1
San Jose 1
San Juan 1
Seattle 1
Short Hills 1
Siak Sri Indrapura 1
Sofia 1
Sorocaba 1
Stockholm 1
São Gonçalo 1
São José 1
Tashkent 1
Thanh Mỹ Tây 1
Thái Nguyên 1
Tokyo 1
Toronto 1
Tremembé 1
Ubá 1
Totale 215
Nome #
First-Principles Design of Ohmic FET Devices from 2D Transition Metal Dichalcogenides 61
Substitutional p-Type Doping in NbS2-MoS2 Lateral Heterostructures Grown by MOCVD 57
Vertical Heterostructures between Transition-Metal Dichalcogenides--A Theoretical Analysis of the NbS2/WSe2 Junction 50
Electrostatic tuning of transmission in NbS2/WSe2 two-dimensional lateral heterostructures: A computational study 42
Correction: Theoretical Analysis of a 2D Metallic/Semiconducting Transition-Metal Dichalcogenide NbS2//WSe2 Hybrid Interface (Advanced Theory and Simulations, (2020), 3, 12, (2000164), 10.1002/adts.202000164) 41
Theoretical Analysis of a 2D Metallic/Semiconducting Transition-Metal Dichalcogenide NbS2//WSe2 Hybrid Interface 38
Totale 289
Categoria #
all - tutte 982
article - articoli 982
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.964


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202418 0 0 0 0 0 0 0 0 3 0 6 9
2024/2025126 1 1 7 5 19 6 8 19 6 5 29 20
2025/2026145 15 20 14 12 39 5 9 6 4 17 4 0
Totale 289