BRUNETTI, ROSSELLA
BRUNETTI, ROSSELLA
Istituto Nanoscienze - NANO - Sede Secondaria Modena
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Diffusion and high-frequency noise of electronsin amorphous semiconductors at low electric fields
2012 Buscemi, Fabrizio , ; Piccinini, Enrico , ; Rudan, Massimo , ; Brunetti, Rossella ; Jacoboni, Carlo
Voltage snapback in amorphous-GST memory devices: Transport model and validation
2011 Rudan, M; Giovanardi, F; Piccinini, E; Buscemi, F; Brunetti, R; Jacoboni, C
Biased molecular simulations for free-energy mapping: A comparison on the KcsA channel as a test case
2008 Piccinini, E; Ceccarelli, M; Affinito, F; Brunetti, R; Jacoboni, C
Computational analysis of current and noise properties of a single open ion channel
2007 Piccinini, E; Affinito, F; Brunetti, R; Jacoboni, C; Rudan, M
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Diffusion and high-frequency noise of electronsin amorphous semiconductors at low electric fields | 1-gen-2012 | Buscemi, Fabrizio , ; Piccinini, Enrico , ; Rudan, Massimo , ; Brunetti, Rossella ; Jacoboni, Carlo | |
| Voltage snapback in amorphous-GST memory devices: Transport model and validation | 1-gen-2011 | Rudan, M; Giovanardi, F; Piccinini, E; Buscemi, F; Brunetti, R; Jacoboni, C | |
| Biased molecular simulations for free-energy mapping: A comparison on the KcsA channel as a test case | 1-gen-2008 | Piccinini, E; Ceccarelli, M; Affinito, F; Brunetti, R; Jacoboni, C | |
| Computational analysis of current and noise properties of a single open ion channel | 1-gen-2007 | Piccinini, E; Affinito, F; Brunetti, R; Jacoboni, C; Rudan, M |