Charge transport in amorphous chalcogenide-GST used for memory devices is modeled using two contributions: hopping of trapped electrons and motion of band electrons in extended states. The type of feedback that produces the snapback phenomenon is described as a filamentation in energy that is controlled by electron-electron interactions between trapped electrons and band electrons. The model thus derived is implemented within a state-of-the-art simulator. An analytical version of the model is also derived and is useful for discussing the snapback behavior and the scaling properties of the device. © 2011 IEEE.
Voltage snapback in amorphous-GST memory devices: Transport model and validation
Brunetti R;
2011
Abstract
Charge transport in amorphous chalcogenide-GST used for memory devices is modeled using two contributions: hopping of trapped electrons and motion of band electrons in extended states. The type of feedback that produces the snapback phenomenon is described as a filamentation in energy that is controlled by electron-electron interactions between trapped electrons and band electrons. The model thus derived is implemented within a state-of-the-art simulator. An analytical version of the model is also derived and is useful for discussing the snapback behavior and the scaling properties of the device. © 2011 IEEE.File in questo prodotto:
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