STREICHER, ISABEL MARIA
STREICHER, ISABEL MARIA
Istituto per la Microelettronica e Microsistemi - IMM
Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15N
2024 Wolff, Niklas; Schönweger, Georg; Streicher, Isabel; Islam, Md Redwanul; Braun, Nils; Straňák, Patrik; Kirste, Lutz; Prescher, Mario; Lotnyk, Andriy; Kohlstedt, Hermann; Leone, Stefano; Kienle, Lorenz; Fichtner, Simon
Understanding Interfaces in AlScN/GaN Heterostructures
2024 Streicher, I.; Leone, S.; Zhang, M.; Tlemcani, T. S.; Bah, M.; Stranak, P.; Kirste, L.; Prescher, M.; Yassine, A.; Alquier, D.; Ambacher, O.
AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition with 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz
2023 Krause, S.; Streicher, I.; Waltereit, P.; Kirste, L.; Bruckner, P.; Leone, S.
Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal-Organic Chemical Vapor Deposition
2023 Streicher, I.; Leone, S.; Manz, C.; Kirste, L.; Prescher, M.; Waltereit, P.; Mikulla, M.; Quay, R.; Ambacher, O.
Enhanced AlScN/GaN Heterostructures Grown with a Novel Precursor by Metal–Organic Chemical Vapor Deposition
2023 Streicher, I.; Leone, S.; Kirste, L.; Manz, C.; Stranak, P.; Prescher, M.; Waltereit, P.; Mikulla, M.; Quay, R.; Ambacher, O.
Metal-Organic Chemical Vapor Deposition of Aluminum Yttrium Nitride
2023 Leone, S.; Streicher, I.; Prescher, M.; Straňák, P.; Kirste, L.
Effect of V/III ratio and growth pressure on surface and crystal quality of AlN grown on sapphire by metal-organic chemical vapor deposition
2022 Streicher, I.; Leone, S.; Kirste, L.; Ambacher, O.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15N | 1-gen-2024 | Wolff, Niklas; Schönweger, Georg; Streicher, Isabel; Islam, Md Redwanul; Braun, Nils; Straňák, Patrik; Kirste, Lutz; Prescher, Mario; Lotnyk, Andriy; Kohlstedt, Hermann; Leone, Stefano; Kienle, Lorenz; Fichtner, Simon | |
| Understanding Interfaces in AlScN/GaN Heterostructures | 1-gen-2024 | Streicher, I.; Leone, S.; Zhang, M.; Tlemcani, T. S.; Bah, M.; Stranak, P.; Kirste, L.; Prescher, M.; Yassine, A.; Alquier, D.; Ambacher, O. | |
| AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition with 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz | 1-gen-2023 | Krause, S.; Streicher, I.; Waltereit, P.; Kirste, L.; Bruckner, P.; Leone, S. | |
| Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal-Organic Chemical Vapor Deposition | 1-gen-2023 | Streicher, I.; Leone, S.; Manz, C.; Kirste, L.; Prescher, M.; Waltereit, P.; Mikulla, M.; Quay, R.; Ambacher, O. | |
| Enhanced AlScN/GaN Heterostructures Grown with a Novel Precursor by Metal–Organic Chemical Vapor Deposition | 1-gen-2023 | Streicher, I.; Leone, S.; Kirste, L.; Manz, C.; Stranak, P.; Prescher, M.; Waltereit, P.; Mikulla, M.; Quay, R.; Ambacher, O. | |
| Metal-Organic Chemical Vapor Deposition of Aluminum Yttrium Nitride | 1-gen-2023 | Leone, S.; Streicher, I.; Prescher, M.; Straňák, P.; Kirste, L. | |
| Effect of V/III ratio and growth pressure on surface and crystal quality of AlN grown on sapphire by metal-organic chemical vapor deposition | 1-gen-2022 | Streicher, I.; Leone, S.; Kirste, L.; Ambacher, O. |