Enhanced AlScN/GaN Heterostructures Grown with a Novel Precursor by Metal–Organic Chemical Vapor Deposition

Growth of AlScN high-electron-mobility transistor (HEMT) structures by metal–organic chemical vapor deposition (MOCVD) is challenging due to the low vapor pressure of the conventionally used precursor tris-cyclopentadienyl-scandium (Cp3Sc). It is shown that the electrical and structural characteristics of the AlScN/GaN heterostructure improve significantly by using bis-methylcyclopentadienyl-scandiumchloride ((MCp)2ScCl), which has a higher vapor pressure and allows for an increased molar flow and thus higher growth rate (GR). AlScN/GaN HEMT heterostructures with superior electrical characteristics deposited at different barrier growth temperatures are presented. The sheet resistance (Formula presented.) of 172 Ω sq−1 obtained at 900 °C barrier growth temperature is among the lowest reported so far for AlScN/GaN HEMT structures. The sheet charge carrier density (Formula presented.) is (Formula presented.) and the electron mobility μ is 1124 cm2 Vs−1.