Aim of this project was to provide the experimental and theoretical assessments needed to support the application of the excimer laser annealing (ELA) method to the future MOS technology. This innovative process represented a breakthrough for the formation of ultra-shallow abrupt junctions with high electrical activation. Beside the experimental investigations, we developed computational tools, capable of simulating the micro structural kinetics following the laser induced melting and leading to the recover of crystalline order. The FLASH project had therefore two inter-related specific objectives: the feasibility study of the application of the ELA method to the fabrication of 70 nm CMOS and the production of a software capable to simulate the interaction of the laser beam with a silicon device. The companies participating to the project have used the experimental results to support their equipment and process development.

Fundamental and Applications of Laser Processing for Highly Innovative MOS Technology

Privitera V;La Magna A;Fortunato G;Mariucci L;
2005

Abstract

Aim of this project was to provide the experimental and theoretical assessments needed to support the application of the excimer laser annealing (ELA) method to the future MOS technology. This innovative process represented a breakthrough for the formation of ultra-shallow abrupt junctions with high electrical activation. Beside the experimental investigations, we developed computational tools, capable of simulating the micro structural kinetics following the laser induced melting and leading to the recover of crystalline order. The FLASH project had therefore two inter-related specific objectives: the feasibility study of the application of the ELA method to the fabrication of 70 nm CMOS and the production of a software capable to simulate the interaction of the laser beam with a silicon device. The companies participating to the project have used the experimental results to support their equipment and process development.
2005
Istituto per la Microelettronica e Microsistemi - IMM
laser
MOSFET
shallow junction
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/183446
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