This volume contains the papers presented at the Fifth Symposium on 'SiO2, Advanced Dielectrics and Related Devices', held in Chamonix Mont-Blanc, France, June 21-23, 2004. The symposium continues a series of symposia (formerly French-Italian symposia) previously held in Agelonde (1996), l'Aquila (1998), Fuveau (Aix-Marseille, 2000) and Trento (2002). The main objective of these symposia is to regularly provide an overview of the state-of-the-art in the physics and chemistry of SiO2, new dielectric materials in the microelectronics and optoelectronics fields and their applications. A further objective is to enhance informal exchanges and collaborations between scientists. The present meeting was attended by 80 registered participants from Italian, French, German, Swiss, Belgian and Brazilian communities, including 32 Ph.D. students. Their participation has been made possible by support received from several sponsors who are gratefully acknowledged. This symposium has also benefited from the high organizational competence of both the Tourism Office of Chamonix and the Conference Center 'Le Majestic'. We would like to acknowledge Mrs. Cathy Méot, Gérardine Pignatelli and Mr. Jean-Paul Bouilloux for their professional and kind support. The City of Chamonix Mont-Blanc, the Mayor of Chamonix, Mr. Michel Charlet, and Mrs. Michèle Rabbiosi, Delegate to Special Events, are also sincerely acknowledged. A total of 59 contributions were presented during the Symposium: 36 during the oral sessions and 23 in posters. Forty-seven papers were submitted, after the conference, to the Journal of Non-Crystalline Solids, following a regular reviewing process. This Special Issue contains the 41 papers finally accepted for publication. We are grateful to all the participants, authors and referees who have contributed to the success of this edition process. Rendezvous in 2006 will be in Palermo (Sicily) for the 6th edition of the Symposium which will coincide with the 50th anniversary of the publication of the first paper on the E' center in Silica!
Journal of Non-Crystalline Solids - Vol. 351, Issue 21-23
M Ferrari;
2005
Abstract
This volume contains the papers presented at the Fifth Symposium on 'SiO2, Advanced Dielectrics and Related Devices', held in Chamonix Mont-Blanc, France, June 21-23, 2004. The symposium continues a series of symposia (formerly French-Italian symposia) previously held in Agelonde (1996), l'Aquila (1998), Fuveau (Aix-Marseille, 2000) and Trento (2002). The main objective of these symposia is to regularly provide an overview of the state-of-the-art in the physics and chemistry of SiO2, new dielectric materials in the microelectronics and optoelectronics fields and their applications. A further objective is to enhance informal exchanges and collaborations between scientists. The present meeting was attended by 80 registered participants from Italian, French, German, Swiss, Belgian and Brazilian communities, including 32 Ph.D. students. Their participation has been made possible by support received from several sponsors who are gratefully acknowledged. This symposium has also benefited from the high organizational competence of both the Tourism Office of Chamonix and the Conference Center 'Le Majestic'. We would like to acknowledge Mrs. Cathy Méot, Gérardine Pignatelli and Mr. Jean-Paul Bouilloux for their professional and kind support. The City of Chamonix Mont-Blanc, the Mayor of Chamonix, Mr. Michel Charlet, and Mrs. Michèle Rabbiosi, Delegate to Special Events, are also sincerely acknowledged. A total of 59 contributions were presented during the Symposium: 36 during the oral sessions and 23 in posters. Forty-seven papers were submitted, after the conference, to the Journal of Non-Crystalline Solids, following a regular reviewing process. This Special Issue contains the 41 papers finally accepted for publication. We are grateful to all the participants, authors and referees who have contributed to the success of this edition process. Rendezvous in 2006 will be in Palermo (Sicily) for the 6th edition of the Symposium which will coincide with the 50th anniversary of the publication of the first paper on the E' center in Silica!I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
