This book is a translation of the previous Italian version published in 2013, however many parts have been modified and improved. Technical aspects are considered in order to acquaint the reader with the field of crystal growth from vapour phase, thereby the author wanted to introduce this technique to beginners with no experience in crystal growth, so they could learn to use it. Chapter 1 explains the crystal growth of bulk crystals by chemical vapour transport and sublimation methods. The apparatus are described in detail. Chapter 2 deals with the vapour phase epitaxy in all experimental aspects. Chapter 3 is dedicated to the growth of nanowires. The application of the above techniques to germanium is described in Chapter 4 where bulk, epitaxy and nanowires growth are taken into account. Finally, some fundamental aspects are presented in the appendix. The figures and images represent the apparatus constructed at the IMEM (former MASPEC) Institute. The crystals, epilayers and nanowires were grown by the author.
Un libro che introduce il lettore alla crescita da fase vapore di cristalli e strati epitassiali. L'intenzione dell'autore è di rendere il lettore in grado di preparare cristalli e strati epitassiali di composti semiconduttori. Nella prima parte si parla della crescita di cristalli massivi per sublimazione e per trasporto chimico. Nella seconda parte si parla della crescita di strati epitassiali, introdotta: nei suoi aspetti più fondamentali, attraverso la descrizione delle apparecchiature e come esempio la crescita e lo studio dell'eterostruttura GaAs/Ge. In entrambi i casi sono descritti gli apparati sperimentali con sufficiente dettaglio per poterli realizzare. Le illustrazioni con le immagini si riferiscono ad apparecchiature realizzate all'Istituto IMEM (ex Maspec) e a cristalli cresciuti dall'autore.
Technical aspects on crystal growth from vapour phase
ATTOLINI Giovanni
2015
Abstract
This book is a translation of the previous Italian version published in 2013, however many parts have been modified and improved. Technical aspects are considered in order to acquaint the reader with the field of crystal growth from vapour phase, thereby the author wanted to introduce this technique to beginners with no experience in crystal growth, so they could learn to use it. Chapter 1 explains the crystal growth of bulk crystals by chemical vapour transport and sublimation methods. The apparatus are described in detail. Chapter 2 deals with the vapour phase epitaxy in all experimental aspects. Chapter 3 is dedicated to the growth of nanowires. The application of the above techniques to germanium is described in Chapter 4 where bulk, epitaxy and nanowires growth are taken into account. Finally, some fundamental aspects are presented in the appendix. The figures and images represent the apparatus constructed at the IMEM (former MASPEC) Institute. The crystals, epilayers and nanowires were grown by the author.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.