We summarize hereafter the SAM findings on InP thin films, respectively grown on Si (100) and Si(111) substrates by Hydride Vapor phase epitaxy at KTH, and compare them with the data obtained on InP crystalline standard. Measurements were taken at acceleration voltage V=10kV, reference electron beam current I=10nA and energy resolution ?E/E=0.5%. To summarize, it is evident that crystalline grains of InP are formed by the chosen growth method. These grains are quasi-stoichiometric. Namely, the InP composition appears to be slightly deviated towards a Phosphorous-rich stoichiometry. Correspondingly, also the InMNN and PLMM Auger peaks measured in the film are shifted with respect to the case of the InP reference sample. Both these findings might indicate that a different coordination occurs in the InP films, with respect to the InP single crystal. And this in turn might be related to some level of oxidation, as confirmed from some of the local findings which also include non negligible Oxygen content. However, the deviation from stoichiometry is so low ( 1÷4%) that it might also just be ascribed to the extreme surface unevenness, in the presence of perfectly stoichiometric 1:1 InP crystalline grains.
Analysis of SAM data on InP/Si thin films: comparison with standard crystalline InP
Silvia Maria Pietralunga
2013
Abstract
We summarize hereafter the SAM findings on InP thin films, respectively grown on Si (100) and Si(111) substrates by Hydride Vapor phase epitaxy at KTH, and compare them with the data obtained on InP crystalline standard. Measurements were taken at acceleration voltage V=10kV, reference electron beam current I=10nA and energy resolution ?E/E=0.5%. To summarize, it is evident that crystalline grains of InP are formed by the chosen growth method. These grains are quasi-stoichiometric. Namely, the InP composition appears to be slightly deviated towards a Phosphorous-rich stoichiometry. Correspondingly, also the InMNN and PLMM Auger peaks measured in the film are shifted with respect to the case of the InP reference sample. Both these findings might indicate that a different coordination occurs in the InP films, with respect to the InP single crystal. And this in turn might be related to some level of oxidation, as confirmed from some of the local findings which also include non negligible Oxygen content. However, the deviation from stoichiometry is so low ( 1÷4%) that it might also just be ascribed to the extreme surface unevenness, in the presence of perfectly stoichiometric 1:1 InP crystalline grains.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
