This PhD thesis is focused on the study and characterization of the defectiveness observed in the interface between the substrate and the oxide of modern SiC power MOSFETs
STUDY AND CHARACTERIZATION OF MODERN 4H-SiC POWER MOSFETs / Consentino, Giuseppe. - (2021).
STUDY AND CHARACTERIZATION OF MODERN 4H-SiC POWER MOSFETs
Giuseppe Consentino
2021
Abstract
This PhD thesis is focused on the study and characterization of the defectiveness observed in the interface between the substrate and the oxide of modern SiC power MOSFETsFile in questo prodotto:
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PhD finale Unical Giuseppe Consentino XXXIII course_finale definitivo (3).pdf
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