Molecular doping

Method of doping a semiconductor sample in a uniform and carbon - free way , wherein said sample has a surface , comprising the following steps : A. removing oxides from at least part of the said surface ; B. dip coating said at least part of the surface of the sample in a dopant based carbon - free solution of at least one dopant based carbon free substance diluted in water , wherein said at least one dopant based carbon free substance has a molecule comprising at least one dopant atom , wherein the dip coating is achieved by heating said dopant based carbon - free solution at a dip coating temperature from 65 % to 100 % of the boiling temperature of said dopant based carbon - free solution , thereby a self assembled mono - layer including dopant atoms is formed ; C. annealing said sample , wherein the annealing is configured to cause said dopant atoms included in said self - assembled mono - layer to be diffused into the sample