Calibration of ITO sputter deposition with Elettrorava ERSPUT8

In this study, indium tin oxide (ITO) thin films were deposited at room temperature using RF magnetron sputtering, with no additional oxygen introduced into the deposition environment. This protocol aimed to evaluate how variations in film thickness and RF sputtering power influence the surface morphology, as well as the optical and electrical properties of the resulting ITO thin films. Understanding these relationships is essential for tailoring the characteristics of ITO films for advanced applications, particularly in optoelectronic devices such as solar cells. The absence of intentionally introduced oxygen during the deposition process distinguishes this work from conventional ITO film fabrication techniques, where controlled oxygen incorporation is often utilized to adjust electrical conductivity and optical transparency. By avoiding this additional variable, the study offers valuable insights into the inherent effects of film thickness and sputtering power on ITO properties, providing a foundation for optimizing deposition conditions under simplified growth environments. Simultaneously, optical transmittance, particularly in the visible spectrum, was investigated to ensure that the films maintain high transparency, a key requirement for maximizing light absorption in photovoltaic devices.