BUFFAGNI, ELISA
 Distribuzione geografica
Continente #
AS - Asia 6
EU - Europa 4
NA - Nord America 3
Totale 13
Nazione #
CH - Svizzera 3
KR - Corea 3
US - Stati Uniti d'America 3
CN - Cina 2
IT - Italia 1
SG - Singapore 1
Totale 13
Città #
Geneva 3
Seoul 3
Guangzhou 2
Boardman 1
Forest City 1
Parma 1
Singapore 1
Totale 12
Nome #
Indium composition profiles in low density InAs/InGaAs quantum dot nanostructures 3
Buffer layer optimization for the growth of state of the art 3C-SiC/Si 2
Crystal-field spectroscopy of Eu3+ doped silica glasses 1
Hetero-epitaxy of epsilon-Ga2O3 layers by MOCVD and ALD 1
Wetting layer states in low density InAs/InGaAs quantum dots from sub-critical InAs coverages 1
Bent crystals as high efficiency optical elements for hard x-ray astronomy 1
Bent crystals as high efficiency optical elements for hard x-ray astronomy 1
Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy 1
Self standing curved crystals for gamma ray focusing 1
High quality 3C-SiC/Si grown on an optimized SiC buffer layer 1
Totale 13
Categoria #
all - tutte 519
article - articoli 290
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 11
Totale 820


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20248 0 0 0 0 0 0 0 0 1 0 5 2
2024/20255 5 0 0 0 0 0 0 0 0 0 0 0
Totale 13