PILUSO, NICOLO'
PILUSO, NICOLO'
Istituto per la Microelettronica e Microsistemi - IMM
Analysis on 3C-SiC layer grown on pseudomorphic-Si/Si1-xGex/Si(001) heterostructures
2015 Piluso, N; Camarda, M; Anzalone, R; Severino, A; Scalese, S; La Via, F
Strain evaluation and fracture properties of hetero-epitaxial single crystal 3C-SiC squared membrane
2015 Anzalone, R; Arrigo, Gd; Camarda, M; Piluso, N; La Via, F
4H-SiC epitaxial layer grown on 150 mm automatic horizontal hot wall reactor PE1O6
2014 Mauceri, M; Pecora, A; Litrico, G; Vecchio, C; Puglisi, M; Crippa, D; Piluso, N; Camarda, M; La Via, F
A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults
2014 Piluso, N; Camarda, M; La Via, F
Current-induced defect formation in multi-walled carbon nanotubes
2014 Scuderi, V; Tripodi, L; Piluso, N; Bongiorno, C; Di Franco, S; Scalese, S
Curvature evaluation of Si/3C-SiC/Si hetero-structure grown by Chemical Vapor Deposition
2014 Anzalone, R; Camarda, M; Severino, A; Piluso, N; La Via, F
Electrically Trimmable Phase Change Ge2Sb2Te5 Resistors With Tunable Temperature Coefficient of Resistance
2014 Privitera, Stefania; D'Arrigo, Giuseppe; Mio, Antonio M.; Piluso, Nicolo; La Via, Francesco; Rimini, Emanuele
Evaluation of mechanical and optical properties of hetero-epitaxial single crystal 3C-SiC squared-membrane
2014 Anzalone, R; D'Arrigo, G; Camarda, M; Piluso, N; Via, Fl
Fracture property and quantitative strain evaluation of hetero-epitaxial single crystal 3C-SiC membrane
2014 Anzalone R.; D'Arrigo G.; Camarda M.; Piluso N.; La Via F.
Micro-Raman characterization of 4H-SiC stacking faults
2014 Piluso, N; Camarda, M; Anzalone, R; La Via, F
Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates
2014 Von Kanel H.; Isa F.; Falub C.V.; Barthazy E.J.; Muller E.; Chrastina D.; Isella G.; Kreiliger T.; Taboada A.G.; Meduna M.; Kaufmann R.; Neels A.; Dommann A.; Niedermann P.; Mancarella F.; Mauceri M.; Puglisi M.; Crippa D.; La Via F.; Anzalone R.; Piluso N.; Bergamaschini R.; Marzegalli A.; Miglio L.
3C-SiC growth on (001) Si substrates by using a multilayer buffer
2013 Canino, A; Severino, A; Piluso, N; La Via, F; Privitera, S Alberti A
Correlation between macroscopic and microscopic stress fields: Application to the 3C-SiC/Si heteroepitaxy
2013 Camarda M;Anzalone R;Severino A;Piluso N;Canino A;La Via F;La Magna; A
Effects of Al ion implantation on 3C-SiC crystal structure
2013 Severino, A; Piluso, N; Marino, A; Via, La; F,
Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001)
2013 Giannazzo, F; Deretzis, I; La Magna, A; Di Franco, S; Piluso, N; Fiorenza, P; Roccaforte, F; Schmid, P; Lerch, W; Yakimova, R
Micro and nanoscale electrical characterization of large-area graphene transferred to functional substrates
2013 G. Fisichella; S. Di Franco; P. Fiorenza; R. Lo Nigro; F. Roccaforte; C.Tudisco; G. G. Condorelli; N. Piluso; N. Spartà; S. Lo Verso; C. Accardi; C.Tringali; S. Ravesi; F. Giannazzo
Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates
2013 Fisichella, G; Di Franco, S; Fiorenza, P; Lo Nigro, R; Roccaforte, F; Tudisco, C; Condorelli, Gg; Piluso, N; Sparto, N; Lo Verso, S; Accardi, C; Tringali, C; Ravesi, S; Giannazzo, F
Micro-Raman analysis and finite-element modeling of 3 C-SiC microstructures
2013 Piluso, N; Anzalone, R; Camarda, M; Severino, A; La Magna, A; D'Arrigo, G; La Via, F
Patterned substrate with inverted silicon pyramids for 3C-SiC epitaxial growth: A comparison with conventional (001) Si substrate
2013 La Via F;D'Arrigo G;Severino A;Piluso N;Mauceri M;Locke C;Saddow; S E
Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate-supported graphene
2013 Giannazzo F; Fisichella G; Lo Nigro R; Fiorenza P; Di Franco S; Marino A; Piluso N; Rimini E; Roccaforte F
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Analysis on 3C-SiC layer grown on pseudomorphic-Si/Si1-xGex/Si(001) heterostructures | 1-gen-2015 | Piluso, N; Camarda, M; Anzalone, R; Severino, A; Scalese, S; La Via, F | |
| Strain evaluation and fracture properties of hetero-epitaxial single crystal 3C-SiC squared membrane | 1-gen-2015 | Anzalone, R; Arrigo, Gd; Camarda, M; Piluso, N; La Via, F | |
| 4H-SiC epitaxial layer grown on 150 mm automatic horizontal hot wall reactor PE1O6 | 1-gen-2014 | Mauceri, M; Pecora, A; Litrico, G; Vecchio, C; Puglisi, M; Crippa, D; Piluso, N; Camarda, M; La Via, F | |
| A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults | 1-gen-2014 | Piluso, N; Camarda, M; La Via, F | |
| Current-induced defect formation in multi-walled carbon nanotubes | 1-gen-2014 | Scuderi, V; Tripodi, L; Piluso, N; Bongiorno, C; Di Franco, S; Scalese, S | |
| Curvature evaluation of Si/3C-SiC/Si hetero-structure grown by Chemical Vapor Deposition | 1-gen-2014 | Anzalone, R; Camarda, M; Severino, A; Piluso, N; La Via, F | |
| Electrically Trimmable Phase Change Ge2Sb2Te5 Resistors With Tunable Temperature Coefficient of Resistance | 1-gen-2014 | Privitera, Stefania; D'Arrigo, Giuseppe; Mio, Antonio M.; Piluso, Nicolo; La Via, Francesco; Rimini, Emanuele | |
| Evaluation of mechanical and optical properties of hetero-epitaxial single crystal 3C-SiC squared-membrane | 1-gen-2014 | Anzalone, R; D'Arrigo, G; Camarda, M; Piluso, N; Via, Fl | |
| Fracture property and quantitative strain evaluation of hetero-epitaxial single crystal 3C-SiC membrane | 1-gen-2014 | Anzalone R.; D'Arrigo G.; Camarda M.; Piluso N.; La Via F. | |
| Micro-Raman characterization of 4H-SiC stacking faults | 1-gen-2014 | Piluso, N; Camarda, M; Anzalone, R; La Via, F | |
| Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates | 1-gen-2014 | Von Kanel H.; Isa F.; Falub C.V.; Barthazy E.J.; Muller E.; Chrastina D.; Isella G.; Kreiliger T.; Taboada A.G.; Meduna M.; Kaufmann R.; Neels A.; Dommann A.; Niedermann P.; Mancarella F.; Mauceri M.; Puglisi M.; Crippa D.; La Via F.; Anzalone R.; Piluso N.; Bergamaschini R.; Marzegalli A.; Miglio L. | |
| 3C-SiC growth on (001) Si substrates by using a multilayer buffer | 1-gen-2013 | Canino, A; Severino, A; Piluso, N; La Via, F; Privitera, S Alberti A | |
| Correlation between macroscopic and microscopic stress fields: Application to the 3C-SiC/Si heteroepitaxy | 1-gen-2013 | Camarda M;Anzalone R;Severino A;Piluso N;Canino A;La Via F;La Magna; A | |
| Effects of Al ion implantation on 3C-SiC crystal structure | 1-gen-2013 | Severino, A; Piluso, N; Marino, A; Via, La; F, | |
| Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001) | 1-gen-2013 | Giannazzo, F; Deretzis, I; La Magna, A; Di Franco, S; Piluso, N; Fiorenza, P; Roccaforte, F; Schmid, P; Lerch, W; Yakimova, R | |
| Micro and nanoscale electrical characterization of large-area graphene transferred to functional substrates | 1-gen-2013 | G. Fisichella; S. Di Franco; P. Fiorenza; R. Lo Nigro; F. Roccaforte; C.Tudisco; G. G. Condorelli; N. Piluso; N. Spartà; S. Lo Verso; C. Accardi; C.Tringali; S. Ravesi; F. Giannazzo | |
| Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates | 1-gen-2013 | Fisichella, G; Di Franco, S; Fiorenza, P; Lo Nigro, R; Roccaforte, F; Tudisco, C; Condorelli, Gg; Piluso, N; Sparto, N; Lo Verso, S; Accardi, C; Tringali, C; Ravesi, S; Giannazzo, F | |
| Micro-Raman analysis and finite-element modeling of 3 C-SiC microstructures | 1-gen-2013 | Piluso, N; Anzalone, R; Camarda, M; Severino, A; La Magna, A; D'Arrigo, G; La Via, F | |
| Patterned substrate with inverted silicon pyramids for 3C-SiC epitaxial growth: A comparison with conventional (001) Si substrate | 1-gen-2013 | La Via F;D'Arrigo G;Severino A;Piluso N;Mauceri M;Locke C;Saddow; S E | |
| Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate-supported graphene | 1-gen-2013 | Giannazzo F; Fisichella G; Lo Nigro R; Fiorenza P; Di Franco S; Marino A; Piluso N; Rimini E; Roccaforte F |