In this work, the effect of high temperature molten KOH wet etching on GaN/AlGaN epilayer has been investigated for different family of dislocations. The high etching temperature (up to 510°C) allows a good definition of the pits, making easy the observation and the counts. Such high temperature will allow a detailed study on the statistical distribution of the dislocations on whole wafer by optical microscope for screw/mixed dislocation. A comparison on dislocation density between AlGaN/GaN structure grown on Si (111) substrate and 4H-SiC substrate has been performed.

High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer

Anzalone, Ruggero;Greco, Giuseppe;Roccaforte, Fabrizio;Fiorenza, Patrick;Piluso, Nicolo;
2022

Abstract

In this work, the effect of high temperature molten KOH wet etching on GaN/AlGaN epilayer has been investigated for different family of dislocations. The high etching temperature (up to 510°C) allows a good definition of the pits, making easy the observation and the counts. Such high temperature will allow a detailed study on the statistical distribution of the dislocations on whole wafer by optical microscope for screw/mixed dislocation. A comparison on dislocation density between AlGaN/GaN structure grown on Si (111) substrate and 4H-SiC substrate has been performed.
2022
Istituto per la Microelettronica e Microsistemi - IMM
dislocations
GaN
high temperature
KOH etching
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/524450
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