In this work, the effect of high temperature molten KOH wet etching on GaN/AlGaN epilayer has been investigated for different family of dislocations. The high etching temperature (up to 510°C) allows a good definition of the pits, making easy the observation and the counts. Such high temperature will allow a detailed study on the statistical distribution of the dislocations on whole wafer by optical microscope for screw/mixed dislocation. A comparison on dislocation density between AlGaN/GaN structure grown on Si (111) substrate and 4H-SiC substrate has been performed.
High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer
Anzalone, Ruggero;Greco, Giuseppe;Roccaforte, Fabrizio;Fiorenza, Patrick;Piluso, Nicolo;
2022
Abstract
In this work, the effect of high temperature molten KOH wet etching on GaN/AlGaN epilayer has been investigated for different family of dislocations. The high etching temperature (up to 510°C) allows a good definition of the pits, making easy the observation and the counts. Such high temperature will allow a detailed study on the statistical distribution of the dislocations on whole wafer by optical microscope for screw/mixed dislocation. A comparison on dislocation density between AlGaN/GaN structure grown on Si (111) substrate and 4H-SiC substrate has been performed.File in questo prodotto:
File | Dimensione | Formato | |
---|---|---|---|
2022_MSF.1062.18.pdf
accesso aperto
Tipologia:
Versione Editoriale (PDF)
Licenza:
Creative commons
Dimensione
747.92 kB
Formato
Adobe PDF
|
747.92 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.