PUZZANGHERA, MAURIZIO
PUZZANGHERA, MAURIZIO
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The role of defects on forward current in 4H-SiC p-i-n diodes
2019 Sozzi, Giovanna; Puzzanghera, Maurizio; Menozzi, Roberto; Nipoti, Roberta
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area
2017 Sozzi, Giovanna; Puzzanghera, Maurizio; Chiorboli, Giovanni; Nipoti, Roberta
Structural and functional characterizations of Al+ implanted 4H-SiC layers and Al+ implanted 4H-SiC p-n junctions after 1950°C post implantation annealing
2016 Nipoti, Roberta; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
The role of defects on forward current in 4H-SiC p-i-n diodes | 1-gen-2019 | Sozzi, Giovanna; Puzzanghera, Maurizio; Menozzi, Roberto; Nipoti, Roberta | |
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area | 1-gen-2017 | Sozzi, Giovanna; Puzzanghera, Maurizio; Chiorboli, Giovanni; Nipoti, Roberta | |
Structural and functional characterizations of Al+ implanted 4H-SiC layers and Al+ implanted 4H-SiC p-n junctions after 1950°C post implantation annealing | 1-gen-2016 | Nipoti, Roberta; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto |