PUZZANGHERA, MAURIZIO
PUZZANGHERA, MAURIZIO
The role of defects on forward current in 4H-SiC p-i-n diodes
2019 Sozzi, Giovanna; Puzzanghera, Maurizio; Menozzi, Roberto; Nipoti, Roberta
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4 ?cm2 specific resistance on 0.1-1 ?cm p-type 4H-SiC
2018 Nipoti, Roberta; Puzzanghera, Maurizio; Canino, Maria Concetta; Sozzi, Giovanna; Fedeli, Paolo
Al+ ion implanted 4H-SiC vertical p+-i-n diodes: Processing dependence of leakage currents and OCVD carrier lifetimes
2017 Nipoti, R.; Puzzanghera, M.; Sozzi, G.
Dlts study on Al+ ion implanted and 1950°c annealed p-i-n 4H-SiC vertical diodes
2017 Ayedh, H. M.; Puzzanghera, M.; Svensson, B. G.; Nipoti, R.
Ni-Al-Ti ohmic contacts on 1 x 10(20) cm(-3) Al+ ion implanted 4H-SiC
2017 Nipoti, R.; Puzzanghera, M.; Canino, M. C.; Sozzi, G.
Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC
2017 Fedeli, P; Puzzanghera, M; Moscatelli, F; Minamisawa, Ra; Alfieri, G; Grossner, U; Nipoti, R
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area
2017 Sozzi, Giovanna; Puzzanghera, Maurizio; Chiorboli, Giovanni; Nipoti, Roberta
Point defects investigation of high energy proton irradiated SiC p+-i-n diodes
2017 Alfieri, G; Mihaila, A; Nipoti, R; Puzzanghera, M; Sozzi, G; Godignon, P; Milan, J
Thermal stability of 1x10(20) cm(-3) Al+ implanted 4H-SiC after electrical activation at temperature >= 1850 degrees C
2017 Nipoti, R; Canino, M C; Puzzanghera, M; Sozzi, G
4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing
2016 Nipoti, Roberta; Parisini, Antonella; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto
Al + implanted vertical 4H-SiC p-i-n diodes: Experimental and simulated forward current-voltage characteristics
2016 Nipoti, Roberta; Sozzi, Giovanna; Puzzanghera, Maurizio; Menozzi, Roberto
Forward current of Al+ implanted 4H-SiC diodes: A study on the periphery and area components
2016 Puzzanghera, Maurizio; Nipoti, Roberta
Structural and functional characterizations of Al+ implanted 4H-SiC layers and Al+ implanted 4H-SiC p-n junctions after 1950°C post implantation annealing
2016 Nipoti, Roberta; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto
P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation
2014 Nipoti, R; Puzzanghera, M; Moscatelli, F
P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation
2014 Nipoti, R; Puzzanghera, M; Moscatelli, F
Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes
2014 A. Nath; Mulpuri V. Rao; F. Moscatelli; M. Puzzanghera; R. Nipoti