SELMO, SIMONE
SELMO, SIMONE
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Risultati 1 - 4 di 4 (tempo di esecuzione: 0.002 secondi).
In-doped Sb nanowires grown by MOCVD for high speed phase change memories
2019 Cecchini, R; Selmo, S; Wiemer, C; Fanciulli, M; Rotunno, E; Lazzarini, L; Rigato, M; Pogany, D; Lugstein, A; Longo, M
Single-step Au-catalysed synthesis and microstructural characterization of core-shell Ge/In-Te nanowires by MOCVD
2018 Cecchini, Raimondo; Selmo, Simone; Wiemer, Claudia; Rotunno, Enzo; Lazzarini, Laura; De Luca, Marta; Zardo, Ilaria; Longo, Massimo
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires
2016 Selmo, S; Cecchini, R; Cecchi, S; Wiemer, C; Fanciulli, M; Rotunno, E; Lazzarini, L; Rigato, M; Pogany, A; Lugstein, A; Longo, M
Thermal resistance measurement of In3SbTe2 nanowires
2016 Battaglia J.L.; Saci A.; De I.; Cecchini R.; Selmo S.; Fanciulli M.; Cecchi S.; Longo M.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
In-doped Sb nanowires grown by MOCVD for high speed phase change memories | 1-gen-2019 | Cecchini, R; Selmo, S; Wiemer, C; Fanciulli, M; Rotunno, E; Lazzarini, L; Rigato, M; Pogany, D; Lugstein, A; Longo, M | |
Single-step Au-catalysed synthesis and microstructural characterization of core-shell Ge/In-Te nanowires by MOCVD | 1-gen-2018 | Cecchini, Raimondo; Selmo, Simone; Wiemer, Claudia; Rotunno, Enzo; Lazzarini, Laura; De Luca, Marta; Zardo, Ilaria; Longo, Massimo | |
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires | 1-gen-2016 | Selmo, S; Cecchini, R; Cecchi, S; Wiemer, C; Fanciulli, M; Rotunno, E; Lazzarini, L; Rigato, M; Pogany, A; Lugstein, A; Longo, M | |
Thermal resistance measurement of In3SbTe2 nanowires | 1-gen-2016 | Battaglia J.L.; Saci A.; De I.; Cecchini R.; Selmo S.; Fanciulli M.; Cecchi S.; Longo M. |