PANASCI, SALVATORE ETHAN
 Distribuzione geografica
Continente #
AS - Asia 544
NA - Nord America 383
EU - Europa 342
SA - Sud America 134
AF - Africa 18
OC - Oceania 2
Totale 1.423
Nazione #
US - Stati Uniti d'America 357
SG - Singapore 224
IT - Italia 157
CN - Cina 117
BR - Brasile 109
VN - Vietnam 76
HK - Hong Kong 42
FI - Finlandia 37
NL - Olanda 30
FR - Francia 27
GB - Regno Unito 22
DE - Germania 21
IN - India 15
KR - Corea 14
BD - Bangladesh 12
JP - Giappone 12
AR - Argentina 11
EC - Ecuador 9
MX - Messico 8
CA - Canada 7
ID - Indonesia 6
PL - Polonia 6
ZA - Sudafrica 6
ES - Italia 5
JM - Giamaica 5
UA - Ucraina 5
BG - Bulgaria 4
CO - Colombia 4
MA - Marocco 4
GR - Grecia 3
IE - Irlanda 3
IL - Israele 3
MY - Malesia 3
RU - Federazione Russa 3
AT - Austria 2
AZ - Azerbaigian 2
GT - Guatemala 2
LT - Lituania 2
NO - Norvegia 2
PK - Pakistan 2
RO - Romania 2
SA - Arabia Saudita 2
SE - Svezia 2
SK - Slovacchia (Repubblica Slovacca) 2
TR - Turchia 2
AE - Emirati Arabi Uniti 1
AU - Australia 1
BJ - Benin 1
BS - Bahamas 1
BW - Botswana 1
BY - Bielorussia 1
CM - Camerun 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
EE - Estonia 1
EG - Egitto 1
HR - Croazia 1
HU - Ungheria 1
IQ - Iraq 1
KE - Kenya 1
KG - Kirghizistan 1
KW - Kuwait 1
KZ - Kazakistan 1
LB - Libano 1
LV - Lettonia 1
NI - Nicaragua 1
OM - Oman 1
PG - Papua Nuova Guinea 1
PH - Filippine 1
QA - Qatar 1
RW - Ruanda 1
SD - Sudan 1
SI - Slovenia 1
SY - Repubblica araba siriana 1
TM - Turkmenistan 1
TT - Trinidad e Tobago 1
VE - Venezuela 1
Totale 1.423
Città #
Singapore 123
San Jose 92
Cavallino 42
Hong Kong 42
Ashburn 32
Los Angeles 31
Beijing 29
Dallas 27
Hefei 27
Ho Chi Minh City 24
Lauterbourg 20
Hanoi 18
Lappeenranta 18
Messina 17
Santa Clara 16
New York 13
Seoul 13
Bologna 12
Helsinki 11
Catania 8
Frankfurt am Main 8
Tokyo 8
Turku 8
Haiphong 7
Orem 7
Rome 7
Manchester 6
Buffalo 5
Falkenstein 5
Johannesburg 5
Palermo 5
Phoenix 5
São Paulo 5
Bitonto 4
Boston 4
Mumbai 4
Rio de Janeiro 4
Seattle 4
Trieste 4
Warsaw 4
Amsterdam 3
Atlanta 3
Boardman 3
Campinas 3
Casale sul Sile 3
Chennai 3
Chicago 3
Council Bluffs 3
Denver 3
Düsseldorf 3
Elk Grove Village 3
Guayaquil 3
Houston 3
Kingston 3
Milan 3
Montreal 3
Munich 3
Parma 3
Sofia 3
Wuhan 3
Anápolis 2
Arapiraca 2
Athens 2
Baku 2
Belo Horizonte 2
Bengaluru 2
Bratislava 2
Brooklyn 2
Bắc Ninh 2
Bến Tre 2
Cao Lanh 2
Casablanca 2
Caxias do Sul 2
Dhaka 2
Dublin 2
Goiânia 2
Greenville 2
Juneau 2
Kolkata 2
Kuala Lumpur 2
Lomas de Zamora 2
Manaus 2
Minamishinagawa 2
New Delhi 2
Newark 2
Paris 2
Phú Thọ 2
Ponta Grossa 2
Poplar 2
Quito 2
Quảng Ngãi 2
Recife 2
Riyadh 2
San Dorligo della Valle 2
San Francisco 2
Senhor do Bonfim 2
Shijiazhuang 2
Stockholm 2
The Bronx 2
Toronto 2
Totale 864
Nome #
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 114
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC 78
Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications 69
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition 68
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 66
Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN 65
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 63
Mild Temperature Thermal Treatments of Gold-Exfoliated Monolayer MoS2 62
Interface Properties of MoS2 van der Waals Heterojunctions with GaN 59
Interface Structure and Doping of Chemical Vapor Deposition-Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations 58
Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate 57
Understanding the impact of extended crystalline defects on 4H-SiC power MOSFETs by multiscale correlative electrical, optical and thermal characterizations 56
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 56
Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films 54
Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices 54
Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire 54
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 53
Exploring UV-Laser Effects on Al-Implanted 4H-SiC 53
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition 52
Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition 51
Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions 51
Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation 48
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene 48
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) 46
Direct Atomic Layer Deposition of Ultrathin Aluminum Oxide on Monolayer MoS2 Exfoliated on Gold: The Role of the Substrate 42
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition 36
Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films 33
Totale 1.546
Categoria #
all - tutte 3.949
article - articoli 3.828
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.777


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202412 0 0 0 0 0 0 0 0 5 0 6 1
2024/2025601 10 1 10 2 22 151 53 73 36 41 114 88
2025/2026933 38 117 87 123 145 61 109 65 71 68 49 0
Totale 1.546