CNR Institutional Research Information System

PANASCI, SALVATORE ETHAN
 Distribuzione geografica
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Continente #
AS - Asia 558
NA - Nord America 450
EU - Europa 361
SA - Sud America 135
AF - Africa 18
OC - Oceania 2
Totale 1.524
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Nazione #
US - Stati Uniti d'America 416
SG - Singapore 224
IT - Italia 170
CN - Cina 118
BR - Brasile 110
VN - Vietnam 76
HK - Hong Kong 42
FI - Finlandia 37
NL - Olanda 30
FR - Francia 27
BD - Bangladesh 23
GB - Regno Unito 22
DE - Germania 21
KR - Corea 16
IN - India 15
JP - Giappone 12
AR - Argentina 11
CA - Canada 10
EC - Ecuador 9
MX - Messico 8
JM - Giamaica 7
ES - Italia 6
ID - Indonesia 6
PL - Polonia 6
ZA - Sudafrica 6
UA - Ucraina 5
BG - Bulgaria 4
CO - Colombia 4
MA - Marocco 4
BE - Belgio 3
GR - Grecia 3
GT - Guatemala 3
IE - Irlanda 3
IL - Israele 3
MY - Malesia 3
RU - Federazione Russa 3
AT - Austria 2
AZ - Azerbaigian 2
CH - Svizzera 2
LT - Lituania 2
NI - Nicaragua 2
NO - Norvegia 2
PK - Pakistan 2
RO - Romania 2
SA - Arabia Saudita 2
SE - Svezia 2
SK - Slovacchia (Repubblica Slovacca) 2
TR - Turchia 2
AE - Emirati Arabi Uniti 1
AU - Australia 1
BJ - Benin 1
BS - Bahamas 1
BW - Botswana 1
BY - Bielorussia 1
CM - Camerun 1
CR - Costa Rica 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
EE - Estonia 1
EG - Egitto 1
HR - Croazia 1
HU - Ungheria 1
IQ - Iraq 1
KE - Kenya 1
KG - Kirghizistan 1
KW - Kuwait 1
KZ - Kazakistan 1
LB - Libano 1
LV - Lettonia 1
OM - Oman 1
PG - Papua Nuova Guinea 1
PH - Filippine 1
QA - Qatar 1
RW - Ruanda 1
SD - Sudan 1
SI - Slovenia 1
SY - Repubblica araba siriana 1
TM - Turkmenistan 1
TT - Trinidad e Tobago 1
VE - Venezuela 1
Totale 1.524
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Città #
Singapore 123
San Jose 93
Cavallino 42
Hong Kong 42
Ashburn 35
Los Angeles 34
Beijing 29
Hefei 28
Dallas 27
Ho Chi Minh City 24
Lauterbourg 20
Hanoi 18
Lappeenranta 18
Messina 17
Santa Clara 17
Bologna 13
New York 13
Seoul 13
Helsinki 11
Rome 10
Catania 8
Frankfurt am Main 8
Tokyo 8
Turku 8
Buffalo 7
Haiphong 7
Orem 7
Phoenix 7
Manchester 6
Atlanta 5
Boston 5
Falkenstein 5
Johannesburg 5
Kingston 5
Newark 5
Palermo 5
São Paulo 5
Trieste 5
Bitonto 4
Chicago 4
College Station 4
Houston 4
Milan 4
Montreal 4
Mumbai 4
Queens 4
Rio de Janeiro 4
Seattle 4
Warsaw 4
Amsterdam 3
Boardman 3
Campinas 3
Casale sul Sile 3
Chennai 3
Council Bluffs 3
Denver 3
Düsseldorf 3
Elk Grove Village 3
Guayaquil 3
Miami 3
Munich 3
Parma 3
Sofia 3
Toronto 3
Wuhan 3
Anápolis 2
Arapiraca 2
Athens 2
Baku 2
Belo Horizonte 2
Bengaluru 2
Bratislava 2
Brooklyn 2
Bắc Ninh 2
Bến Tre 2
Cao Lanh 2
Casablanca 2
Caxias do Sul 2
Charlotte 2
Dhaka 2
Dublin 2
Genoa 2
Goiânia 2
Greenville 2
Jeonju-si 2
Juneau 2
Kolkata 2
Kuala Lumpur 2
Lomas de Zamora 2
Managua 2
Manaus 2
McAllen 2
Minamishinagawa 2
New Delhi 2
Newnan 2
Paris 2
Peru 2
Phú Thọ 2
Ponta Grossa 2
Poplar 2
Totale 900
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Nome #
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 141
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 84
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC 78
Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications 70
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition 70
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 66
Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN 66
Interface Properties of MoS2 van der Waals Heterojunctions with GaN 64
Mild Temperature Thermal Treatments of Gold-Exfoliated Monolayer MoS2 63
Interface Structure and Doping of Chemical Vapor Deposition-Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations 62
Understanding the impact of extended crystalline defects on 4H-SiC power MOSFETs by multiscale correlative electrical, optical and thermal characterizations 59
Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate 58
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 57
Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films 57
Exploring UV-Laser Effects on Al-Implanted 4H-SiC 57
Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire 57
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 56
Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices 56
Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions 54
Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition 53
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition 53
Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation 50
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene 50
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) 46
Direct Atomic Layer Deposition of Ultrathin Aluminum Oxide on Monolayer MoS2 Exfoliated on Gold: The Role of the Substrate 42
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition 39
Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films 35
Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN 7
Totale 1.650
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Categoria #
all - tutte 4.600
article - articoli 4.464
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.064
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202412 0 0 0 0 0 0 0 0 5 0 6 1
2024/2025601 10 1 10 2 22 151 53 73 36 41 114 88
2025/2026984 38 117 87 123 145 61 109 65 71 68 55 45
2026/202753 53 0 0 0 0 0 0 0 0 0 0 0
Totale 1.650