CNR Institutional Research Information System

PANASCI, SALVATORE ETHAN
 Distribuzione geografica
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Continente #
EU - Europa 109
AS - Asia 48
NA - Nord America 25
Totale 182
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Nazione #
IT - Italia 91
SG - Singapore 42
US - Stati Uniti d'America 25
FI - Finlandia 9
DE - Germania 5
KR - Corea 3
HK - Hong Kong 2
NL - Olanda 2
CN - Cina 1
HU - Ungheria 1
RO - Romania 1
Totale 182
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Città #
Messina 17
Cavallino 16
Santa Clara 15
Singapore 14
Bologna 12
Helsinki 9
Catania 6
Falkenstein 5
Bitonto 4
Casale sul Sile 3
Palermo 3
Parma 3
Seattle 3
Seoul 3
Hong Kong 2
Amsterdam 1
Guangzhou 1
Kalocsa 1
Lucca 1
Milan 1
Prato 1
Rome 1
Sarzana 1
Tremestieri Etneo 1
Totale 124
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Nome #
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 26
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC 17
Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition 16
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 13
Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications 13
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene 12
Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN 12
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition 11
Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films 11
Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices 11
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) 10
Interface Structure and Doping of Chemical Vapor Deposition-Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations 10
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition 10
Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions 10
Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate 9
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 9
Direct Atomic Layer Deposition of Ultrathin Aluminum Oxide on Monolayer MoS2 Exfoliated on Gold: The Role of the Substrate 9
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition 9
Interface Properties of MoS2 van der Waals Heterojunctions with GaN 9
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 8
Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire 8
Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation 6
Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films 6
Exploring UV-Laser Effects on Al-Implanted 4H-SiC 6
Totale 261
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Categoria #
all - tutte 634
article - articoli 621
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.255
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202412 0 0 0 0 0 0 0 0 5 0 6 1
2024/2025249 10 1 10 2 22 151 53 0 0 0 0 0
Totale 261