CNR Institutional Research Information System

ARCIPRETE, FABRIZIO

ARCIPRETE, FABRIZIO  

Istituto per la Microelettronica e Microsistemi - IMM  

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Risultati 1 - 17 di 17 (tempo di esecuzione: 0.035 secondi).
Titolo Data di pubblicazione Autore(i) File
Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics 1-gen-2024 Calvi, S.; Bertelli, M.; De Simone, S.; Maita, F.; Prili, S.; Diaz Fattorini, A.; De Matteis, F.; Mussi, V.; Righi Riva, F.; Longo, M.; Arciprete, F.; Calarco, R.
Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation 1-gen-2024 Bertelli, M.; Sfuncia, G.; De Simone, S.; Diaz Fattorini, A.; Calvi, S.; Mussi, V.; Arciprete, F.; Mio, A. M.; Calarco, R.; Longo, M.
Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)m(Sb2Te3)n Lamellae 1-gen-2024 Cecchi, S.; Momand, J.; Dragoni, D.; Abou El Kheir, O.; Fagiani, F.; Kriegner, D.; Rinaldi, Cristian.; Arciprete, F.; Holy, V.; Kooi, B. J.; Bernasconi, M.; Calarco, R.
Two-dimensional single crystal monoclinic gallium telluride on silicon substrate via transformation of epitaxial hexagonal phase 1-gen-2023 Zallo, E.; Pianetti, A.; Prikhodko, A. S.; Cecchi, S.; Zaytseva, Y. S.; Giuliani, A.; Kremser, M.; Borgardt, N. I.; Finley, J. J.; Arciprete, F.; Palummo, M.; Pulci, O.; Calarco, R.
Epitaxial growth of GeTe/Sb2Te3 superlattices 1-gen-2022 Wang, R.; Calarco, R.; Arciprete, F.; Bragaglia, V.
Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy 1-gen-2022 Díaz Fattorini, A.; López García, C. Chèze.; Petrucci, C.; Bertelli, M.; Righi Riva, F.; Prili, S.; Privitera, S. M. S.; Buscema, M.; Sciuto, A.; Di Franco, S.; D'Arrigo, G.; Longo, M.; De Simone, S.; Mussi, V.; Placidi, E.; Cyrille, M. -C.; Tran, N. -P.; Calarco, R.; Arciprete, F.
Hints for a General Understanding of the Epitaxial Rules for van der Waals Epitaxy from Ge-Sb-Te Alloys 1-gen-2022 Arciprete, F.; Boschker, J. E.; Cecchi, S.; Zallo, E.; Bragaglia, V.; Calarco, R.
Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible Polyimide 1-gen-2022 Bertelli, Marco; DIAZ FATTORINI, Adriano; DE SIMONE, Sara; Calvi, Sabrina; Plebani, Riccardo; Mussi, Valentina; Arciprete, Fabrizio; Calarco, Raffaella; Longo, Massimo
Keep it simple and switch to pure tellurium 1-gen-2021 Calarco, R.; Arciprete, F.
Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga (As,Bi) Alloys 1-gen-2020 Tisbi, E; Placidi, E; Magri, R; Prosposito, P; Francini, R; Zaganelli, A; Cecchi, S; Zallo, E; Calarco, R; Luna, E; Honolka, J; Vondráek, M; Colonna, S; Arciprete, F
Electronic properties of GaAsBi(001) alloys at low Bi content 1-gen-2019 Honolka, J; Hogan, C; Vondrácek, M; Polyak, Y; Arciprete, F; Placidi, E
Two-dimensional antiferromagnetic ordering of the Mn/GaAs(001) interface 1-gen-2019 Colonna, S; Sessi, V; Placidi, E; Ronci, F; Jimenez, E; Arciprete, F
Influence of surface crystal-orientation on transfer doping of V2O5/H-terminated diamond 1-gen-2018 Verona, C; Arciprete, F; Foffi, M; Limiti, E; Marinelli, M; Placidi, E; Prestopino, G; Verona Rinati, G
Strain-engineered arrays of InAs quantum dots on GaAs(001): epitaxial growth and modeling 1-gen-2017 V. Latini; E. Placidi; R. Magri; E. Tisbi; F. Patella; F. Arciprete
Tuning the growth for a selective nucleation of chains of Quantum Dots behaving as single photon emitters 1-gen-2017 Latini, V; Tisbi, E; Placidi, E; Patella, F; Biccari, F; Gurioli, M; Vinattieri, A; Arciprete, F
2D Voronoi tessellation generated by lines and belts of dots 1-gen-2016 Fanfoni, M; Filabozzi, A; Placidi, E; Patella, F; Balzarotti, A; Arciprete, F
Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots 1-gen-2016 Tisbi, E; Latini, V; Patella, F; Placidi, E; Placidi, E; Arciprete, F; Arciprete, F