In the quest for superlattices with engineered interfaces for disruptive applications such as neuromorphic computing, we present a dedicated study on the epitaxial growth of nominal GeTe/Sb2Te3 chalcogenide superlattices (CSL) on the Sb passivated Si(111) − (√3 × √3)R30°− Sb surface. Intermixing at the GeTe and Sb2Te3 interface is assessed by X-Ray diffraction and reflectivity. A new growth procedure with element flux interruptions is proposed to engineer the degree of intermixing and the tailoring of the GeSbTe layers into Sb-rich compositions.

Epitaxial growth of GeTe/Sb2Te3 superlattices

Calarco R.;Arciprete F.;
2022

Abstract

In the quest for superlattices with engineered interfaces for disruptive applications such as neuromorphic computing, we present a dedicated study on the epitaxial growth of nominal GeTe/Sb2Te3 chalcogenide superlattices (CSL) on the Sb passivated Si(111) − (√3 × √3)R30°− Sb surface. Intermixing at the GeTe and Sb2Te3 interface is assessed by X-Ray diffraction and reflectivity. A new growth procedure with element flux interruptions is proposed to engineer the degree of intermixing and the tailoring of the GeSbTe layers into Sb-rich compositions.
2022
Istituto per la Microelettronica e Microsistemi - IMM - Sede Secondaria Roma
Epitaxy
GeSbTe alloys
GeTe/Sb
2
Te
3
superlattices
Interface engineering
Neuromorphic computing
PCM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/520652
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