statistiche ricercatore

Continente	#
AS - Asia	363
NA - Nord America	300
EU - Europa	158
SA - Sud America	81
Continente sconosciuto - Info sul continente non disponibili	50
AF - Africa	9
Totale	961

Nazione	#
US - Stati Uniti d'America	277
SG - Singapore	147
CN - Cina	79
BR - Brasile	60
VN - Vietnam	44
HK - Hong Kong	33
FR - Francia	31
IT - Italia	25
CA - Canada	17
DE - Germania	17
FI - Finlandia	15
GB - Regno Unito	12
KR - Corea	12
NL - Olanda	10
EC - Ecuador	8
IN - India	8
UA - Ucraina	8
ID - Indonesia	7
BD - Bangladesh	6
BE - Belgio	6
PL - Polonia	5
AR - Argentina	4
ES - Italia	4
LT - Lituania	4
IE - Irlanda	3
JP - Giappone	3
KG - Kirghizistan	3
MX - Messico	3
PH - Filippine	3
PY - Paraguay	3
SE - Svezia	3
ZA - Sudafrica	3
AE - Emirati Arabi Uniti	2
AT - Austria	2
BG - Bulgaria	2
BY - Bielorussia	2
CL - Cile	2
CO - Colombia	2
CR - Costa Rica	2
DZ - Algeria	2
IL - Israele	2
RU - Federazione Russa	2
SI - Slovenia	2
TH - Thailandia	2
TR - Turchia	2
UZ - Uzbekistan	2
CZ - Repubblica Ceca	1
EE - Estonia	1
GR - Grecia	1
IQ - Iraq	1
IR - Iran	1
JM - Giamaica	1
KE - Kenya	1
LA - Repubblica Popolare Democratica del Laos	1
LY - Libia	1
MK - Macedonia	1
MY - Malesia	1
NP - Nepal	1
PE - Perù	1
PK - Pakistan	1
RO - Romania	1
SA - Arabia Saudita	1
SY - Repubblica araba siriana	1
TN - Tunisia	1
UG - Uganda	1
UY - Uruguay	1
Totale	911

Nome	#
Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible Polyimide	97
Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy	84
Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation	68
Electronic properties of GaAsBi(001) alloys at low Bi content	66
Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga (As,Bi) Alloys	66
Two-dimensional antiferromagnetic ordering of the Mn/GaAs(001) interface	60
Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics	60
Influence of surface crystal-orientation on transfer doping of V2O5/H-terminated diamond	54
Strain-engineered arrays of InAs quantum dots on GaAs(001): epitaxial growth and modeling	51
Keep it simple and switch to pure tellurium	48
Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)m(Sb2Te3)n Lamellae	48
Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots	48
Epitaxial growth of GeTe/Sb2Te3 superlattices	45
Tuning the growth for a selective nucleation of chains of Quantum Dots behaving as single photon emitters	42
Two-dimensional single crystal monoclinic gallium telluride on silicon substrate via transformation of epitaxial hexagonal phase	42
2D Voronoi tessellation generated by lines and belts of dots	41
Hints for a General Understanding of the Epitaxial Rules for van der Waals Epitaxy from Ge-Sb-Te Alloys	41
Totale	961

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2023/2024	3	0	0	0	0	0	0	0	0	0	0	3	0
2024/2025	376	1	0	8	10	54	43	27	38	18	16	102	59
2025/2026	479	32	48	29	77	104	33	50	18	26	40	12	10
2026/2027	103	36	14	53	0	0	0	0	0	0	0	0	0
Totale													961

CNR Institutional Research Information System