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FRIGERI, CESARE

FRIGERI, CESARE  

Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM  

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Risultati 1 - 20 di 366 (tempo di esecuzione: 0.055 secondi).
Titolo Data di pubblicazione Autore(i) File
(002) DF and HRTEM study of In surface segregation in InGaAs-based MQWs MOCVD grown with different barrier layers 1-gen-1994 Frigeri, C; Gambacorti, N; Longo, F; Di Paola, A; M Richtie, D; Della Giovanna, M
A new semimagnetic compound: Cd1-xFexIn2S4 single crystal grown by CVT 1-gen-2011 Attolini, Giovanni ; Frigeri, Cesare ; Solzi, Massimo ; Delgado, G. E. ; Sagredo, Vicente
A Novel Mechanism to Explain Wafer Bending During the Growth of SiC Films on Si 1-gen-2007 Attolini, G; Bosi, M; Watts, Be; Frigeri, C
A novel mechanism to explain wafer bending during the growth of SiC films on Si 1-gen-2008 Watts B. E.; Attolini G.; Bosi M.; Frigeri C.
A novel mechanism to explain wafer bending during the growth of SiC on Si 1-gen-2008 Watts B. E.; Attolini G.; Bosi M.; Frigeri C.
A reassessment of Te-doped GaAs 1-gen-1997 Frigeri, C; Weyher, Jl; Jiménez, J; Martín, P
A reassessment of Te-doped GaAs 1-gen-1997 C. Frigeri; J.L. Weyher; J. Jiménez;P. Martín
A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals 1-gen-2010 González, M A; Martìnez, O; Jimenez, J; Frigeri, C; Weyher, J L
A structural characterization of GaAs MBE grown on Si pillars 1-gen-2013 C. Frigeri; S. Bietti; A. Scaccabarozzi; R. Bergamaschini; C. V. Falub; V. Grillo; M. Bollani; E. Bonera; P. Niedermann; H. von Känel; S. Sanguinetti; L. Miglio
A Structural Characterization of GaAs MBE Grown on Si Pillars 1-gen-2014 Frigeri, C.; Bietti, S.; Scaccabarozzi, A.; Bergamaschini, R.; Falub, C. V.; Grillo, V.; Bollani, M.; Bonera, E.; Niedermann, P.; von Kaenel, H.; Sanguinetti, S.; Miglio, L.
A study of defects in LEC GaAs after copper diffusion 1-gen-1999 Frigeri, C; L Weyher, J; Müller, S
A study of defects in LEC GaAs after copper diffusion 1-gen-1999 Frigeri, C; L Weyher, J; Müller, S; Hiesinger, P
A study of dislocations in Te-doped GaAs using electron and optical beams 1-gen-1996 Pmartin, ; Frigeri, C; Jimenéz, J; Weyher, J
A study of dislocations, precipitates and deep level EL2 in LEC GaAs grown under Ga-rich conditions 1-gen-1993 Frigeri, C; L Weyher, J; Ch Alt, H
A study of the nucleation of 3C-SiC thin layers on silicon 1-gen-2007 Bosi M.; Attolini G.; Watts B.E.; Frigeri C.; Kaciulis S.; Pandolfi L.; Salviati G.
A TEM study of InGaAs/GaAs SQWs grown by MOVPE on (100) and 2° off (100) GaAs substrates 1-gen-1995 Frigeri, C; Di Paola, A; M Ritchie, D; Longo, F; Brinciotti, A; Riva, M; Vidimari, F
A TEM study of InGaAs/GaAs SQWs MOCVD grown on GaAs substrates oriented either exactly (100) or (100) 2° off <110> 1-gen-1995 C. Frigeri; A. Di Paola; D. M. Ritchie; F. Longo; A. Brinciotti; M. Riva;F. Vidimari
AFM and TEM study of hydrogenated sputtered Si/Ge multilayers 1-gen-2009 Frigeri C.; Nasi L.; Serényi M.; Csik A.; Erdélyi Z.; Beke D. L.
ALD mechanisms in the growth of amorphous Al2O3 onto different substrates 1-gen-2007 Ghilardelli E.; Pelosi C.; Frigeri C.; Chiavarotti G.
An EBIC method for the quantitative determination of dopant concentration at striations in LEC GaAs 1-gen-1987 Frigeri, C