FRIGERI, CESARE
FRIGERI, CESARE
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
UnExploDe: Portable Sensors for Unmanned Explosive Detection
2019 Attolini, G; Beretta, S; Bosi, M; Ferrari, C; Frigeri, C; Frigeri, P; Gombia, E; Lazzarini, L; Rossi, F; Seravalli, L; Trevisi, G; Hasanov, Rovshan; Sultanov, Chingiz; Gahramanova, Gulnaz; Musayeva, Nahida; Orujov, Teymur; Sansone, Francesco; Baldini, Laura; Rispoli, Francesco; Sadre Momtaz, Zahra; Pingue, Pasqualantonio; Roddaro, Stefano
Electron Beam-Induced Current
2016 Frigeri, C
From nano-voids to blisters in hydrogenated amorphous silicon
2013 C. Frigeri ; L. Nasi ; M. Serényi ; N. Q. Khánh ; Zs. Szekrényes ; K. Kamarás ; A. Csik
TEM Characterization of GaAs Nanoislands on Si
2011 C. Frigeri ; S. Bietti ; C. Somaschini ; N. Koguchi ; S. Sanguinetti
EBIC as a tool for the study of gettering phenomena in Silicon
2008 Frigeri, C
EBIC assessment of semiconductors properties
2003 Frigeri, C
Selective etching and complementary microprobe techniques
2003 Weyher, Jl; Frigeri, C; Müller, S
Preface
2002 Frigeri, C
Electron beam-induced current
2001 Frigeri, C
Crystal growth and composition control of pure and doped 123 materials
1992 F. Licci; L. Raffo; C. Frigeri; T. Besagni;P. Ferro
Influence of the Surface Depletion Layer on the Photoetching Rate at Growth Striations in LEC GaAs
1989 Frigeri, C; L Weyher, J; Zanotti, L
Inhomogeneities in LEC GaAs substrates for solar cell applications
1988 C. Frigeri; G. Frigerio;L. Zanotti
Inhomogeneity in LEC GaAs substrates for solar cell applications
1988 Frigeri C.; Frigerio G.; Zanotti L.
Device quality crystal growth of GaAs
1987 Zanotti, L; Paorici, C; Frigeri, C
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| UnExploDe: Portable Sensors for Unmanned Explosive Detection | 1-gen-2019 | Attolini, G; Beretta, S; Bosi, M; Ferrari, C; Frigeri, C; Frigeri, P; Gombia, E; Lazzarini, L; Rossi, F; Seravalli, L; Trevisi, G; Hasanov, Rovshan; Sultanov, Chingiz; Gahramanova, Gulnaz; Musayeva, Nahida; Orujov, Teymur; Sansone, Francesco; Baldini, Laura; Rispoli, Francesco; Sadre Momtaz, Zahra; Pingue, Pasqualantonio; Roddaro, Stefano | |
| Electron Beam-Induced Current | 1-gen-2016 | Frigeri, C | |
| From nano-voids to blisters in hydrogenated amorphous silicon | 1-gen-2013 | C. Frigeri ; L. Nasi ; M. Serényi ; N. Q. Khánh ; Zs. Szekrényes ; K. Kamarás ; A. Csik | |
| TEM Characterization of GaAs Nanoislands on Si | 1-gen-2011 | C. Frigeri ; S. Bietti ; C. Somaschini ; N. Koguchi ; S. Sanguinetti | |
| EBIC as a tool for the study of gettering phenomena in Silicon | 1-gen-2008 | Frigeri, C | |
| EBIC assessment of semiconductors properties | 1-gen-2003 | Frigeri, C | |
| Selective etching and complementary microprobe techniques | 1-gen-2003 | Weyher, Jl; Frigeri, C; Müller, S | |
| Preface | 1-gen-2002 | Frigeri, C | |
| Electron beam-induced current | 1-gen-2001 | Frigeri, C | |
| Crystal growth and composition control of pure and doped 123 materials | 1-gen-1992 | F. Licci; L. Raffo; C. Frigeri; T. Besagni;P. Ferro | |
| Influence of the Surface Depletion Layer on the Photoetching Rate at Growth Striations in LEC GaAs | 1-gen-1989 | Frigeri, C; L Weyher, J; Zanotti, L | |
| Inhomogeneities in LEC GaAs substrates for solar cell applications | 1-gen-1988 | C. Frigeri; G. Frigerio;L. Zanotti | |
| Inhomogeneity in LEC GaAs substrates for solar cell applications | 1-gen-1988 | Frigeri C.; Frigerio G.; Zanotti L. | |
| Device quality crystal growth of GaAs | 1-gen-1987 | Zanotti, L; Paorici, C; Frigeri, C |